Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 3 A IB Base current 0.75 A IBM Base current-Peak 1.5 A IE Emitter current 2.25 A IEM Emitter current-Peak 4.5 A PD Total power dissipation Ta=25℃ 1.4 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.12 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unles otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=0.5A; IB=0.1A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=0.25A TC=100℃ 1.0 1.0 V VCEsat-3 Collector-emitter saturation voltage IC=1.5A;IB=0.5A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=0.5A; IB=0.1A 1.0 V VBEsat-2 Base-emitter saturation voltage IC=1A; IB=0.25A TC=100℃ 1.2 1.1 V ICEV Collector cut-off current VCEV=Rated value; VBE (off) =1.5V TC=100℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=0.5A ; VCE=2V 8 40 hFE-2 DC current gain IC=1A ; VCE=2V 5 25 Transition frequency IC=0.1A ; VCE=10V;f=1MHz 4 Collector outoput capacitance IE=0;f=0.1MHz ; VCB=10V fT COB CONDITIONS MIN TYP. MAX 400 UNIT V MHz 21 pF Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time VCC=125V ,IC=1A IB1=-IB2=0.2A tp=25μs duty cycle≤1% 2 0.05 0.1 μs 0.5 1.0 μs 2.0 4.0 μs 0.4 0.7 μs Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors 4 Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors 5