isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE15032 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) ·DC current gain : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A ·Complement to Type MJE15033 APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 2 A PC Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ B 2 W 50 Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE15032 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A 0.5 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 50 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 50 hFE-3 DC Current Gain IC= 2A ; VCE= 5V 10 Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 1.0MHz 30 fT isc Website：www.iscsemi.cn CONDITIONS B MIN MAX 250 UNIT V MHz