Inchange Semiconductor Product Specification MJE16004 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ,high speed APPLICATIONS ・Switching regulators ・High resolution deflection circuits ・Inverters ・Motor drives PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current 4 A IBM Base current-Peak 8 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJE16004 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=1.5A ;IB=0.15A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=3A ;IB=0.3A TC=100℃ 2.5 2.5 V Base-emitter saturation voltage IC=3A ;IB=0.3A TC=100℃ 1.5 1.5 V ICEV Collector cut-off current VCEV=850V; VBE=1.5V TC=100℃ 0.25 1.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V COB Collector outoput capacitance IE=0 ; VCB=10V;f=1.0kHz 200 pF 0.1 μs 0.3 μs VBEsat CONDITIONS MIN TYP. MAX 450 UNIT V 7 Switching times resistive load,Duty Cycle≤2.0%,Pulse Width=30μs td Delay time tr Rise time ts Storage time 2.7 μs tf Fall time 0.35 μs VCC=250V ,IC=3A IB1=0.3A; IB2=0.6A 2 Inchange Semiconductor Product Specification MJE16004 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3