isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A ·Complement to Type MJE803 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current -1 A PC Collector Power Dissipation TC=25℃ 40 W Ti Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W isc Website：www.iscsemi.cn MJE703 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJE703 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA -2.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -2A; VCE= -3V -2.5 V VBE(on)-2 Base-Emitter On Voltage IC= -4A; VCE= -3V -3.0 V ICEO Collector Cutoff Current VCE= -80V; IB= 0 -0.1 mA ICBO Collector Cutoff Current VCB= -80V; IE= 0 VCB= -80V; IE= 0;TC= 150℃ -0.1 -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -2 A ; VCE= -3V 750 hFE-2 DC Current Gain IC= -4A ; VCE= -3V 100 isc Website：www.iscsemi.cn CONDITIONS MIN MAX -80 B B UNIT V