isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJW21191 DESCRIPTION ·DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Pulsed -16 A IB Base Current-Continuous -2 A PD Total Power Dissipation (TC=25℃) 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C ThermalResistance Junction To Case 0.65 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJW21191 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-10mA; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-4A ;IB=-0.4A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-8A ;IB=-1.6A -2.0 V VBE(on) Base-Emitter On Voltage IC=-4A ; VCE=-2V -2 V ICEs Collector Cutoff Current VCE= -250V; IE=0 -10 μA IEBO Emitter Cutoff Current VEB=-5V; IC=0 -10 μA hFE-1 DC Current Gain IC=-4A; VCE=-2V 15 hFE-2 DC Current Gain IC=-8A; VCE=-2V 5 Current Gain-Bandwidth Product IC=-1A ;VCE=-10V; ftest=1MHz 4 fT isc Website：www.iscsemi.cn CONDITIONS MIN MAX -150 B B 2 TYP. UNIT V 100 MHz