ISC STJ730-090

Thick Film Hybrid IC
INCHANGE
STK730-010
Self-excitation Type Semi-Regulated
Switching Regulator
‹ Features
﹒Power MOSFET devices
﹒Ideal for semi-regulated control switching supplies
﹒Error detection circuit on-chip (40.5±0.5V
set reference voltage)
﹒Pin compatible with all other devices in the same
series of devices with 110 to 280W power ratings
﹒Higher oscillator frequency allows the use of
smaller pulse transformers
Package Dimensions
unit:mm
‹ Applications
﹒CRT/CTV power supplies
﹒Office automation equipment power supplies
‹ Block Diagram
Pin Functions
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(11)
(12)
Vref(40.5V typ) input
Error detection level
Ground
Drive voltage input
TR1 gate
Amplifier circuit control
OCP setting level input
TR1 source
TR1 source
TR1 drain
TR1 drain
Thick Film Hybrid IC
INCHANGE
Specifications
‹ Maximum Ratings at Ta=25℃, Tc=25℃ unless otherwise specified
Parameter
Symbol
Conditions
Ratings
UNIT
Operating substrate temperature
TC max
Recommended value is 105℃
115
℃
AC input voltage
VAC
Specified test circuit
140
Vrms
Operating temperature
Topr
-10 to+85
℃
Storage temperature
Tstg
-30 to+115
℃
Maximum output power
Wo max
110
W
ID
6
A
ID(Pulse)
20
A
Specified test circuit VO=135V
(TR1)
Drain current
Pulse drain current
Drain reverse current
Gate-source voltage
Allowable power dissipation
Chip junction temperature
Thermal resistance
6
A
VGSS
±30
V
PD
78.1
W
Tj max
150
℃
θj-c
1.6
℃/W
PZD1
500
mW
IDR
(ZD1)
Allowable power dissipation
Chip junction temperature
Tj(ZD1)max
125
℃
Thermal resistance
θj-c(ZD1)
0.2
℃/mW
Ratings
UNIT
±8 to±24
V
20 to 120
kHz
‹ Allowable operating ranges at Ta=25℃
Parameter
Symbol
Pin 4 input voltage
V4
Oscillator frequency
fOSC
‹
Conditions
Operating characteristics at Ta=25℃Tc=25℃
( unless otherwise specified,specified test circuits)
Parameter
Symbol
Conditions
Output voltage setting
IIN=8mA
Output voltage temperature coefficient
TC=0 to 105℃, IIN=8mA
min
Typ
max
UNIT
40.0
40.5
41.0
V
mV/℃
7
(TR1)
Drain-source breakdown voltage
V(BR)DSS
ID=10mA,VGS=0V
500
Gate-source cutoff voltage
VGS(off)
ID=1mA,VDS=10V
2.0
ON resistance
RDS(on)
ID=2.5A,VGS=10V
1.4
Ciss
VDS=10V,VGS=0V,f=1MHz
800
VZ
IZ=5mA
Input capacitance
V
3.0
V
1.8
Ω
pF
(ZD1)
Zener voltage
23.7
26.3
V
Thick Film Hybrid IC
INCHANGE
‹ Series organization
These devices form a series with varying output power ratings
Device
VDSS
[V]
Tstg
[℃]
Maximum ratings
TC max Tj max
[℃]
[℃]
ID
[A]
Operating characteristics
ON resistance
Output power
[W]
[Ω]
Input voltage
[V]
STK730-010
6.0
110
1.4
STK730-020
8.0
145
0.8
180
0.7
12.0
210
0.55
15.0
280
0.3
3.0
110
5.0
180
3.0
210
2.0
280
1.2
STK730-030
500
10.0
STK730-040
-30 to
+115
STK730-050
STK730-060
STK730-070
STK730-080
STJ730-090
900
+115
+150
5.0
6.0
8.0
85 to 132
170 to 264