isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min) ·Complement to Type TIP140T APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous -0.5 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.56 ℃/W TIP145T isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor TIP145T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.5 V V BE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V ICBO Collector Cutoff current VCB= -60V, IE= 0 -1 mA ICEO Collector Cutoff current VCE= -30V, IB= 0 -2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA hFE-1 DC Current Gain IC= -5A ; VCE= -4V 1000 hFE-2 DC Current Gain IC= -10A ; VCE= -4V 500 -60 UNIT V Switching Times td Delay Time tr Rise Time tstg tf Storage Time Fall Time isc Website：www.iscsemi.cn VCC= -30 V, IC= - 5.0 A, IB1= -IB2 = -20 mA; tp= 20μs Duty Cycle≤20% 0.15 μs 0.55 μs 2.5 μs 2.5 μs