DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 10 A IDM Tc = 25°C, pulse width limited by TJM 60 A IAR Tc = 25°C 10 A EAR Tc = 25°C 30 mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 940 W 425 W 4.5 W RthJC 0.16 C/W RthJHS 0.23 C/W IS = 0 PDC PDHS Tc = 25°C Derate 4.4W/°C above 25°C PDAMB Tc = 25°C VDSS = 1000 V ID25 = 10 A RDS(on) ≤ 1.2 Ω PDC = 940 W DRAIN GATE SG1 SG2 SD1 SD2 Features Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 20 V, ID = 0.5ID25, pulse test typ. 1000 2.5 3.1 4 Advantages ±100 nA 6 +150 -55 1.6mm (0.063 in) from case for 10 s S V 150 Tstg Ω 5.5 1.2 +150 cycling capability IXYS advanced low Qg process • • − − • • • 50 µA 1 mA TJM Weight V -55 TJ TL max. • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials °C • Optimized for RF and high speed °C • Easy to mount—no insulators needed • High power density °C 300 °C 3 g switching at frequencies to 50MHz DE375-102N10A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. 0.3 Ω 2750 pF 110 pF 20 pF 33 pF 5 ns 3 ns 5 ns 8 ns 81 nC 16 nC 42 nC RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray max. Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V 10 A ISM Repetitive; pulse width limited by TJM 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 1.5 V Trr QRM IF = IS, -di/dt = 100A/µs, VR = 100V typ. max. 200 ns 0.6 µC 7 A IRM For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE375-102N10A RF Power MOSFET Fig. 1 Fig. 2 Typical Transfer Characteristics V DS = 60V, PW = 4uS 35 20 Typical Output Characteristics Top ID, Drain Current (A) ID, Drain Current (A) 30 25 20 15 10 15 Bottom 7.5-10V 7V 6.5V 6V 5.5V 5V 10 5 5 0 0 5 6 7 8 9 0 10 10 50 60 50 60 Extended Typical Output Characteristics 35 14 Top 30 12 ID, Drain Currnet (A) Gate-to-Source Voltage (V) 40 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 500V, ID = 5A 16 10 8 6 4 25 Bottom 8-10V 7.5V 7V 6.5V 6V 5.5V 5V 20 15 10 5 2 0 0 20 40 60 80 100 120 0 140 0 Gate Charge (nC) Fig. 5 VD S vs. Capacitance Ciss 1000 Coss 100 Crss 10 1 0 100 200 300 400 VDS Voltage 10 20 30 40 VDS, Drain-to-Source Voltage (V) 10000 Capacitance (pF) 30 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) Fig. 3 20 500 600 700 800 DE375-102N10A RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source DE375-102N10A RF Power MOSFET DE375-0001 DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at www.ixysrf.com/spice.htm Net List: .SUBCKT 102N10A 10 20 30 * TERMINALS: D G S * 1000 Volt 10 Amp 1.2 ohm N-Channel Power MOSFET * REV.A 05-23-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.5 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 3.0N RD 4 1 1.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0223-0001 Rev 2 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com