DSSK 70-0015B IFAV = 2x35 A VRRM = 15 V VF = 0.33 V Power Schottky Rectifier with common cathode Preliminary Data VRSM VRRM V V 15 15 TO-247 AD Type A DSSK 70-0015B C A A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 130°C; rectangular, d = 0.5 TC = 130°C; rectangular, d = 0.5; per device IFSM 70 35 70 A A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A EAS IAS = tbd A; L = 180 µH; TVJ = 25°C; non repetitive tbd mJ IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive tbd A tbd V/ms (dv/dt)cr TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR VF -55...+150 150 -55...+150 °C °C °C 115 W 0.8...1.2 6 Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM 20 350 mA mA IF = 35 A; IF = 35 A; IF = 70 A; 0.33 0.45 0.45 V V V 1.1 K/W K/W TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.25 Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see outlines.pdf IXYS reserves the right to change limits, Conditions and dimensions. © 2002 IXYS All rights reserved 232 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSSK 70-0015B 100 10000 1000 A TVJ=150°C mA IR IF pF CT 125°C 100 100°C 10 75°C 10 TVJ = 150°C 125°C 25°C 50°C 1 25°C TVJ= 25°C 1 0.0 1000 0.1 0.2 0.4 VF V 0.6 Fig. 1 Maximum forward voltage drop characteristics 0 2 4 6 8 Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 35 W 30 80 A IF(AV) d=0.5 DC d= DC 0.5 0.33 0.25 0.17 0.08 40 15 10 5 0 40 80 120 °C 160 0 10 20 30 TC Fig. 4 Average forward current IF(AV) versus case temperature TC 6 8 10 12 14 V VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 1000 0 0 4 A IFSM 25 20 20 2 10000 P(AV) 60 0 10 12 14 V VR 40 50 IF(AV) 60 A 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics 2 1 K/W ZthJC D=0.5 0.33 0.25 0.17 Single Pulse 0.08 0.1 0.01 0.0001 DSSK 70-0015B 0.001 0.01 0.1 s 1 10 t Note: All curves are per diode 232 Fig. 6 Transient thermal impedance junction to case at various duty cycles © 2002 IXYS All rights reserved 2-2