Advance Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS(on) 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings TJ TJM Tstg -55 ... +150 150 -55 ... +150 °C °C °C VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 300 260 °C °C FC Mounting force 20..120 / 4.5..27 N/lb. 1 Isolated Tab 5 Symbol Test Conditions CP Coupling capacitance between shorted pins and mounting tab in the case dS ,dA dS ,dA Characteristic Values Min. Typ. Max. pin - pin pin - backside metal Weight 40 pF Features z 1.7 5.5 mm mm 9 g z z z P - CHANNEL z Symbol Test Conditions VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200 V z VGSS Continuous ± 20 V z VGSM Transient ± 30 V ID25 TC = 25°C -17 A IDM TC = 25°C, pulse width limited by TJM - 70 A IA TC = 25°C - 26 A z EAS TC = 25°C 1.5 J z PD TC = 25°C 125 W © 2008 IXYS CORPORATION, All rights reserved Maximum Ratings Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance Advantages z z Low gate drive requirement High power density Low drain to ground capacitance Fast switching Applications z z z DC and AC motor drives Class AB audio amplifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies DS100033(08/08) FMP26-02P Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 200 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = -13A, Note 1 gfs VDS = -10V, ID = -13A, Note 1 V - 4.5 V ± 100 nA -10 μA - 150 μA TJ = 125°C 170 mΩ 10 Ciss Coss VGS = 0V, VDS = - 25 V, f = 1 MHz Crss 17 S 2740 pF 540 pF 100 pF td(on) Resistive Switching Times 18 ns tr VGS = -10V, VDS = 0.5 z VDSS, ID = -13A 33 ns td(off) RG = 3.3Ω (External) 46 ns tf 21 ns Qg(on) 56 nC 18 nC 20 nC Qgs VGS= -10V, VDS = 0.5 z ISOPLUS i4-PakTM Outline VDSS, ID = -13A Qgd Ref: IXYS CO 0077 R0 1.0 °C/W RthJC RthCS °C/W 0.15 Drain-Source Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions2 IS VGS = 0V - 17 A ISM Repetitive, pulse width limited by TJM -104 A VSD IF = -13A, VGS = 0 V, Note 1 - 3.2 V trr IF = -13A, di/dt = 100 A/μs 240 ns QRM VR = -100V, VGS = 0V 2.2 μC -18 A IRM ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMP26-02P N - CHANNEL Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1MΩ 200 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 26 A IDM TC = 25°C, pulse width limited by TJM 120 A IA EAS TC = 25°C TC = 25°C 50 1 A J PD TC = 25°C 125 W Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250 μA 200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 25A, (Note 1) gfs VDS = 10V, ID = 25A, (Note 1) VGS = 0V, VDS = 25 V, f = 1 MHz Crss 5.0 V ± 100 nA 25 μA 250 μA TJ = 150°C Ciss Coss V 60 mΩ 12 23 S 2720 pF 490 pF 105 pF td(on) Resistive Switching Times 26 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 25A 35 ns td(off) RG = 10Ω (External) tf Qg(on) Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 25A Qgd 70 ns 30 ns 70 nC 17 nC 37 nC 1.0 °C/W RthJC RthCS © 2008 IXYS CORPORATION, All rights reserved 0.15 °C/W FMP26-02P Source-Drain Diode Symbol Test Conditions3 IS VGS = 0V ISM Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 26 A Repetitive, pulse width limited by TJM 120 A VSD IF = 50A, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/μs 150 ns QRM VR = 100V, VGS = 0V 2.0 μC Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ.