PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS(on) ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 60 A IDM TC = 25° C, pulse width limited by TJM 150 A IAR TC = 25° C 30 A EAR TC = 25° C 100 mJ EAS TC = 25° C 5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD Maximum Ratings 1250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 30..120/7.5...2.7 N/lb 10 g TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s FC Mounting force G Weight Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 © 2006 IXYS All rights reserved TJ = 125° C S D = Drain TAB = Drain Features l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) (TAB) D G = Gate S = Source l TC = 25° C TL TSOLD PLUS264TM (IXFB) Plus 264TM package for clip or spring Space savings High power density V 5.0 V ±200 nA 25 3000 µA µA 140 mΩ DS99560E(02/06) IXFB 60N80P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, Note 1 35 67 S 18 nF 1200 pF 44 pF 36 ns 29 ns 110 ns 26 ns 250 nC 90 nC 78 nC Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 td(off) RG = 1 Ω (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd PLUS264TM (IXFB) Outline 0.10 ° C/W RthJC ° C/W 0.13 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 60 A ISM Repetitive 150 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/µs 250 ns QRM IRM VR = 100V 0.6 6.0 µC A Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFB 60N80P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 120 V GS = 10V 7V V GS = 10V 7V 55 50 100 40 I D - Amperes I D - Amperes 45 35 6V 30 25 20 80 60 6V 40 15 10 20 5 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 3 6 9 15 18 21 24 27 30 Fig. 4. R DS(on) Normalized to ID = 30A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 3.2 V GS = 10V 7V 55 50 V GS = 10V 2.8 40 R DS(on) - Normalized 45 I D - Amperes 12 V DS - Volts V DS - Volts 6V 35 30 25 20 15 2.4 2 I D = 60A I D = 30A 1.6 1.2 5V 10 0.8 5 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 2.8 70 V GS = 10V 2.6 TJ = 125ºC 60 50 2.2 I D - Amperes R DS(on) - Normalized 2.4 2 1.8 1.6 TJ = 25ºC 1.4 40 30 20 1.2 10 1 0.8 0 0 20 40 60 I D - Amperes © 2006 IXYS All rights reserved 80 100 120 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFB 60N80P Fig. 8. Transconductance Fig. 7. Input Admittance 80 130 120 70 110 100 TJ = 125ºC 25ºC - 40ºC 50 g f s - Siemens I D - Amperes 60 40 30 90 80 TJ = - 40ºC 25ºC 125ºC 70 60 50 40 20 30 20 10 10 0 0 4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 6.25 6.5 6.75 0 10 20 30 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 Fig. 10. Gate Charge 180 10 160 9 V DS = 400V I D = 30A 8 140 I G = 10mA 7 V GS - Volts 120 I S - Amperes 40 I D - Amperes 100 80 60 TJ = 125ºC 6 5 4 3 40 2 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1.4 20 40 60 V SD - Volts 80 100 120 140 160 180 200 220 240 260 Q G - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 100,000 1.000 10,000 C iss R (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 C oss 0.100 0.010 100 C rss 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10