PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 14N80P VDSS = 800 V = 8 A ID25 Ω RDS(on) ≤ 770 mΩ ≤ 250 ns trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 8 A IDM TC = 25°C, pulse width limited by TJM 40 A IAR TC = 25°C 7 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.2 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω 10 V/ns PD TC = 25°C 130 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1, leads-to-tab FC Mounting Force 2500 V~ 11..65/2.5..15 N/lb 2 g Weight ISOPLUS220TM (IXFC) E153432 G D G = Gate S = Source BVDSS VGS = 0 V, ID = 250 μA 800 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) Applications DC-DC converters z z TJ = 125°C 5.5 V ±100 nA 25 1 μA mA 770 mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly z z VGS = 10 V, ID = 7 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V D = Drain z z Characteristic Values Min. Typ. Max. (Isolated Tab) Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S z Space savings High power density DS99594E(07/06) IXFC 14N80P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 7 A, pulse test 8 Ciss Coss 15 S 3900 pF 250 pF 19 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 7 A 27 ns td(off) RG = 5 Ω (External) 75 ns tf 21 ns Qg(on) 61 nC 18 nC 20 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 7 A Qgd RthJC 0.75 0.95°C/W RthCS 0.21 °C/W Source-Drain Diode NOTE: 1. Bottom heatsink (Pin 4) is electrically isolated from Pin 1, 2, or 3. Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 14 A ISM Repetitive 40 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A -di/dt = 100 A/μs VR = 100 V, VGS = 0 V 250 ns QRM IRM ISOPLUS220TM (IXFC) Outline 0.4 7 Ref: IXYS CO 0177 R0 μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFC 14N80P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 14 27 VGS = 10V 7V 12 VGS = 10V 7V 24 21 6V ID - Amperes ID - Amperes 10 8 6 18 6V 15 12 9 4 6 5V 2 3 0 5V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.1 14 VGS = 10V VGS = 10V 2.8 12 2.5 RDS(on) - Normalized 6V 10 ID - Amperes 12 VDS - Volts VDS - Volts 5V 8 6 4 2.2 I D = 14A 1.9 1.6 I D = 7A 1.3 1 2 0.7 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 9 VGS = 10V 2.6 8 TJ = 125ºC 2.4 7 2.2 I D - Amperes RDS(on) - Normalized 0 2 1.8 1.6 6 5 4 3 1.4 2 1.2 TJ = 25ºC 1 1 0.8 0 0 4 8 12 16 I D - Amperes © 2006 IXYS All rights reserved 20 24 28 -50 -25 0 25 50 75 T C - Degrees Centigrade 100 125 150 IXFC 14N80P Fig. 8. Transconductance 30 18 27 16 24 14 21 12 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 20 TJ = 125ºC 25ºC - 40ºC 10 8 15 12 6 9 4 6 2 3 0 TJ = - 40ºC 25ºC 125ºC 18 0 3.5 4 4.5 5 5.5 6 0 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 14 16 18 20 Fig. 10. Gate Charge 45 10 40 9 VDS =400V I D = 7A 8 35 I G = 10mA 7 30 VGS - Volts IS - Amperes 8 I D - Amperes 25 TJ = 125ºC 20 TJ = 25ºC 15 6 5 4 3 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 10 VSD - Volts 20 30 40 50 60 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 1.00 10,000 C iss 1,000 R(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 0.10 100 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_14N80P (8J) 6-22-06.xls