IXYS IXFC26N50P

PolarHVTM HiPerFET
Power MOSFET
ISOPLUS 220TM
IXFC 26N50P
VDSS =
=
ID25
RDS(on) ≤
≤
trr
(Electrically Isolated Tab)
500
V
15
A
Ω
260 mΩ
250 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
500
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
500
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
15
A
IDM
TC = 25° C, pulse width limited by TJM
78
A
IAR
TC = 25° C
26
A
EAR
TC = 25° C
40
mJ
EAS
TC = 25° C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
20
V/ns
PD
TC = 25° C
130
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, t = 1, leads-to-tab
FC
Mounting Force
2500
V~
11..65/2.5..15
N/lb
2
g
Weight
ISOPLUS220TM (IXFC)
E153432
G
BVDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
TJ = 125° C
V
5.5
V
±100
nA
25
250
µA
µA
260
mΩ
(Isolated Tab)
D = Drain
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
Applications
DC-DC converters
l
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
DC choppers
l
Characteristic Values
Min. Typ.
Max.
S
G = Gate
S = Source
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
D
AC motor control
Advantages
Easy assembly
l
l
Space savings
l
High power density
DS99310E(03/06)
IXFC 26N50P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = IT, pulse test
18
Ciss
Coss
28
S
3600
pF
380
pF
48
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
20
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
25
ns
td(off)
RG = 4 Ω (External)
58
ns
tf
20
ns
Qg(on)
65
nC
20
nC
20
nC
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
RthJC
0.95° C/W
RthCS
° C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
26
A
ISM
Repetitive
78
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
250 ns
QRM
ISOPLUS220 Outline
0.3
µC
Note: Test Current IT = 13A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
IXFC 26N50P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
26
V GS = 10V
8V
7V
24
22
50
20
45
I D - Amperes
18
I D - Amperes
V GS = 10V
8V
55
16
14
12
6V
10
7V
40
35
30
25
20
8
6
15
4
10
2
6V
5
5V
0
5V
0
0
1
2
3
4
5
6
7
0
3
6
9
26
18
21
24
27
30
3.1
V GS = 10V
7V
24
22
V GS = 10V
2.8
2.5
18
R DS(on) - Normalized
20
I D - Amperes
15
Fig. 4. R DS(on) Normalized to ID = 13A Value
v s. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
6V
16
14
12
10
8
6
5V
2.2
I D = 26A
1.9
1.6
I D = 13A
1.3
1
4
0.7
2
0
0.4
0
2
4
6
8
10
12
14
16
-50
-25
V DS - Volts
0
25
50
75
100
125
150
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 13A Value
v s. Drain Current
Fig. 6. Maximum Drain Current v s.
Case Temperature
3.2
16
3
V GS = 10V
14
TJ = 125ºC
2.8
2.6
12
2.4
I D - Amperes
R DS(on) - Normalized
12
V DS - Volts
V DS - Volts
2.2
2
1.8
1.6
1.4
10
8
6
4
TJ = 25ºC
1.2
2
1
0.8
0
0
5
10
15
20
25
30
35
I D - Amperes
© 2006 IXYS All rights reserved
40
45
50
55
60
-50
-25
0
25
50
75
T J - Degrees Centigrade
100
125
150
IXFC 26N50P
Fig. 8. Transconductance
50
45
45
40
40
35
35
30
g f s - Siemens
I D - Amperes
Fig. 7. Input Admittance
50
TJ = 125ºC
25ºC
- 40ºC
25
20
30
25
20
15
15
10
10
5
5
0
TJ = - 40ºC
25ºC
125ºC
0
3.5
4
4.5
5
5.5
6
6.5
0
7
5
10
15
20
V GS - Volts
25
30
35
40
45
50
55
60
60
65
I D - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
80
10
V DS = 250V
9
70
I D = 13A
8
I G = 10mA
60
I S - Amperes
7
V GS - Volts
50
40
30
TJ = 125ºC
6
5
4
3
20
2
10
TJ = 25ºC
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1.1
5
10
15
V SD - Volts
20
25
30
35
40
45
50
55
Q G - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
100
f = 1 MHz
Capacitance - PicoFarads
RDS(on) Limit
C iss
25µs
I D - Amperes
1,000
C oss
100µs
1ms
10
100
10ms
TJ = 150ºC
C rss
TC = 25ºC
10
DC
1
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V DS - Volts
1000
IXFC 26N50P
Fig. 13. Maximum Transient Thermal Resistance
R (th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_26N50P (6J) 02-09-06-B.xls