PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 200 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 35 A IDM TC = 25°C, pulse width limited by TJM 200 A IAR TC = 25°C 60 A EAR TC = 25°C 40 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 120 W -55 ... +175 175 -55 ... +150 °C °C °C 300 °C 2500 V~ 11..65 / 2.5..15 N/lb TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, IISOL ≤ 1 mA, t = 1 minute FC Mounting Force G D S Isolated back surface* G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Weight 3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VGS = 0 V, ID = 250 μA 200 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 37 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved g Characteristic Values Min. Typ. Max. BVDSS RDS(on) ISOPLUS 220TM E153432 V 5.0 V ±100 nA 25 250 μA μA 36 mΩ Advantages Easy assembly: no screws, or isolation foils required z Space savings z High power density z Low collector capacitance to ground (low EMI) z DS99243E(03/06) IXFC 74N20P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 37 A, pulse test 30 Ciss Coss 44 S 3300 pF 770 pF 190 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 23 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 74 A 21 ns td(off) RG = 4 Ω (External) 60 ns 21 ns 107 nC 24 nC 52 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 37 A Qgd RthJC ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.25 K/W RthCS 0.21 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 74 A ISM Repetitive 180 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A, -di/dt = 100 A/μs 200 ns QRM VR = 100 V, VGS = 0 V 0.4 μC 6 A IRM Ref: IXYS CO 0177 R0 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 74N20P Fig. 2. Exte nde d Output Characte r is tics @ 25ºC Fig. 1. Output Characte r is tics @ 25ºC 200 80 V GS = 10V 70 9V 160 140 50 I D - Amperes I D - Amperes 60 V GS = 10V 180 9V 8V 7V 40 30 6V 8V 120 7V 100 80 60 6V 20 40 10 5V 20 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 2 4 6 Fig. 3. Output Characte r is tics @ 150ºC 12 14 16 18 20 3 V GS = 10V 70 9V 8V V GS = 10V 2.6 R D S ( o n ) - Normalized 60 I D - Amperes 10 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe r atur e 80 7V 50 40 6V 30 20 2.2 I D = 74A 1.8 1.4 I D = 37A 1 5V 10 0 0.6 0 1 2 3 4 5 6 -50 7 -25 0 V D S - V olts 50 75 100 125 150 175 150 175 Fig . 6. Dr ain Cu r r e n t vs . Cas e T e m p e r atu r e 0.5 ID25 V alue vs . ID 5 40 4.5 35 4 30 3 V GS = 10V 2 V GS = 15V I D - Amperes TJ = 175ºC 3.5 2.5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to R D S ( o n ) - Normalized 8 V D S - V olts V D S - V olts 25 20 15 10 1.5 1 TJ = 25ºC 5 0 0.5 0 20 40 60 80 100 120 140 160 180 200 I D - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade IXFC 74N20P Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 100 90 50 80 60 50 40 30 TJ = 150ºC 20 25ºC -40ºC TJ = -40ºC 40 g f s - Siemens I D - Amperes 70 25ºC 150ºC 30 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 100 160 VG S - Volts 140 120 100 80 9 VDS = 100V 8 I D = 37A 7 I G = 10mA 6 5 4 3 TJ = 150ºC 40 2 TJ = 25ºC 1 20 0 0 0.4 0.6 0.8 1 1.2 0 1.4 10 20 30 V S D - Volts 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. For w ard-Bias Fig. 12. 12. Forw Forw ard-Bias Fig. ard-Bias Safe Ope rrating Ar Safe Ope ating Aree aa Safe Operating Area Fig. 11. Capacitance 1000 1000 1000 10000 f = 1MHz TJ = 175ºC C iss R DS(on) Limit IIIDDD---Amperes Amperes Amperes Capacitance - picoFarads 120 Fig. 10. Gate Charge 180 I S - Amperes 80 10 200 60 60 I D - Amperes C oss 1000 TC = 25ºC RRDS(on) Lim it DS(on) Lim it 100 100 100 25µs 25µs 25µs 100µs 1ms 10ms 10 10 10 100µs 100µs 1m 1m ss 10m 10m ss DC TTJJ == 175ºC 175ºC C rss TTCC == 25ºC 25ºC D DC C 11 1 100 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 11 10 10 10 100 V VDD SS -- Volts Volts olts V 100 100 1000 1000 IXFC 74N20P Fig. 13. Maxim um Transient Therm al Resistance R( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds © 2006 IXYS All rights reserved IXYS REF: T_74N20P (6S) 6-15-05-D.xls