HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM (Electrically Isolated Back Surface) VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C 48 220 55 A A A EAR TC = 25°C 60 mJ EAS TC = 25°C 3 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 400 W -40 ... +150 150 -40 ... +150 °C °C °C 300 °C 2500 V~ ISO264TM G D TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS Md Mounting torque t = 1 min G = Gate S = Source z z z z z z 5 D = Drain Features 0.4/6 Nm/lb-in Weight (TAB) S Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier g Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1mA 500 V VGS(th) VDS = VGS, ID = 8mA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Note 1 © 2003 IXYS All rights reserved z z z z ±200 nA TJ = 25°C TJ = 125°C 25 µA 2 mA 90 mΩ DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z z z Easy assembly Space savings High power density DS99050(05/03) IXFG 55N50 Symbol gfs Test Conditions V DS = 10 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 S 9400 pF 1280 pF Crss 460 pF td(on) 45 ns 60 ns 120 ns 45 ns 330 nC 55 nC 155 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd 0.30 RthJC RthCK 0.15 Source-Drain Diode K/W 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - No Connection Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V t rr QRM K/W ✦ 45 ISO264 OUTLINE IF = 25A,-di/dt = 100 A/µs, VR = 100 V 55 A 220 A 1.5 V 250 ns 1.0 µC 10 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IT test current: IT = 27.5A See IXFK55N50 data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343