Not for New Designs IXFH40N30Q IXFT40N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 = 300V = 40A ≤ 85mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-268 (IXFT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA D (Tab) 40 A 160 A TC = 25°C 40 A EAS TC = 25°C 1.0 J dv/dt IS 5 V/ns PD TC = 25°C 300 W -55 ... +150 °C ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXFH) G z z z z z VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 4mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved International Standard Packages Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG High Power Density Easy to Mount Space Savings V Applications 4.0 V z ±100 nA 25 μA 1 mA 85 mΩ D = Drain Tab = Drain Advantages z BVDSS D (Tab) Features z Characteristic Values Min. Typ. Max. S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS98504C(03/11) IXFH40N30Q IXFT40N30Q Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 20 Ciss Coss 27 S 3560 pF 640 pF 170 pF 20 ns 35 ns VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1.5Ω (External) Qg(on) Qgs TO-268 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 40 ns 12 ns 92 140 nC 22 35 nC 38 70 nC Terminals: 1 - Gate 3 - Source 2 - Drain 4 - Drain 0.42 °C/W RthJC RthCS °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 40 A Repetitive, Pulse Width Limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 40A, -di/dt = 100A/μs 250 ns IRM QRM Note VR = 100V, VGS = 0V 8.00 A 0.85 μC TO-247 Outline 1 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH40N30Q IXFT40N30Q Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 40 120 VGS = 10V 8V 7V 35 VGS = 10V 9V 100 8V 25 ID - Amperes ID - Amperes 30 6V 20 15 80 60 7V 40 6V 10 20 5 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 2.8 40 VGS = 10V 8V 7V 35 2.6 VGS = 10V 2.4 R DS(on) - Normalized 30 ID - Amperes 20 VDS - Volts VDS - Volts 6V 25 20 15 5V 10 I D = 40A 2.2 2.0 1.8 I D = 20A 1.6 1.4 1.2 1.0 0.8 5 0.6 0 0.4 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 45 3.6 VGS = 10V 3.2 40 TJ = 125ºC ID - Amperes R DS(on) - Normalized 35 2.8 2.4 2.0 30 25 20 15 TJ = 25ºC 1.6 10 1.2 5 0.8 0 0 10 20 30 40 50 60 70 80 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 90 100 110 120 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH40N30Q IXFT40N30Q Fig. 7. Input Admittance Fig. 8. Transconductance 50 70 TJ = - 40ºC 45 60 40 25ºC 35 g f s - Siemens ID - Amperes 50 40 30 TJ = 125ºC 25ºC - 40ºC 20 30 125ºC 25 20 15 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 10 20 30 VGS - Volts 40 50 60 70 80 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 120 VDS = 150V 100 I D = 20A 8 80 VGS - Volts IS - Amperes I G = 10mA 60 6 4 40 TJ = 125ºC 20 2 TJ = 25ºC 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 10 20 30 40 VSD - Volts 50 60 70 80 90 100 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 f = 1 MHz 1,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 25µs 100 RDS(on) Limit 100µs 1ms 10 TJ = 150ºC Crss 10ms TC = 25ºC Single Pulse 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFH40N30Q IXFT40N30Q Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_40N30Q(7XQ)03-22-11-A