PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS(on) ≤ 7.5 mΩ ≤ 150 ns trr IXFK 200N10P IXFX 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C Maximum Ratings ID(RMS) External lead current limit IDM TC = 25°C, pulse width limited by TJM IAR 200 A 75 A 400 A TC = 25°C 60 A EAR TC = 25°C 100 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 830 W -55 ... +175 175 -55 ... +150 300 260 °C °C °C °C °C 0.9/6 120/45 26 Nm/lb.in Nm/lb.in 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10 s Plastic body for 10 s Md FC Mounting torque TO-264 Mounting force PLUS247 Weight TO-264 PLUS247 20 TO-264 (IXFK) G D PLUS247 (IXFX) D G = Gate S = Source BVDSS VGS = 0 V, ID = 250 μA 100 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±20 V, VGS = 0 V IDSS VDS = VDSS 5.0 V ±100 nA Advantages l l VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V TJ = 150°C TJ = 175°C RDS(on) D = Drain Tab = Drain Features l Characteristic Values Min. Typ. Max. S TAB l Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D (TAB) S 5.5 25 500 2.5 μA μA mA 7.5 mΩ mΩ l Easy to mount Space savings High power density DS99590E(03/06) IXFK 200N10P IXFX 200N10P TO-264 (IXFK) Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 60 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 97 S 7600 pF 2900 pF 860 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns 235 nC 50 nC 135 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd RthJC RthCS TO-264 and PLUS247 0.15 Source-Drain Diode 0.18°C/W °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A, dI/dt = 100 A/μs 150 ns QRM VR = 50 V, VGS = 0 V IRM 0.4 μC 6 A PLUS 247TM (IXFX) Outline Dim. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFK 200N10P IXFX 200N10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 175 VGS = 10V 300 9V 250 I D - Amperes I D - Amperes 150 8V 125 100 75 7V 200 8V 150 7V 100 50 6V 25 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.5 1 1.5 Fig. 3. Output Characteristics @ 150ºC 3 3.5 4 4.5 5 2.4 VGS = 10V 9V VGS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 V D S - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 80 2.4 2.2 70 TJ = 175ºC 2 60 1.8 1.6 I D - Amperes R D S ( o n ) - Normalized 2 V D S - Volts V D S - Volts VGS = 10V 1.4 VGS = 15V 1.2 50 40 30 20 1 0.8 10 TJ = 25ºC 0 0.6 0 50 100 150 200 I D - Amperes © 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFK 200N10P IXFX 200N10P Fig. 8. Transconductance 300 140 250 120 100 200 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 150 TJ = -40ºC 100 25ºC TJ = -40ºC 25ºC 80 150ºC 60 40 150ºC 50 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 50 100 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 250 300 350 Fig. 10. Gate Charge VDS = 50V 9 300 I D = 100A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 200 10 350 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - Volts 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 f = 1MHz TJ = 175ºC R DS(on) Limit C iss 10,000 I D - Amperes Capacitance - picoFarads 150 I D - Amperes C oss C rss 1,000 TC = 25ºC 100µs 100 1ms 10ms DC 100 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - Volts 1000 IXFK 200N10P IXFX 200N10P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000