HiPerFETTM Power MOSFETs IXFH 88N20Q IXFK 88N20Q IXFX 88N20Q VDSS ID25 = 200 V = 88 A Ω = 30 mΩ ≤ 200 ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 88 352 88 A A A EAR EAS TC = 25°C TC = 25°C 50 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD Maximum Ratings D (TAB) TO-264 AA (IXFK) G D 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C G TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. TO-247, PLUS 247 6 TO-264 10 g g G = Gate S = Source z Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 uA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved 200 2.0 TJ = 25°C TJ = 125°C V 4.0 V ±100 nA 25 1 µA mA 30 mΩ D (TAB) D TAB = Drain Features z Symbol D (TAB) S PLUS 247TM (IXFX) TC = 25°C TJ TJM Tstg TO-247 AD (IXFH) z z z z z Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z Easy to mount Space savings High power density DS98969A(03/03) IXFH 88N20Q IXFK 88N20Q IXFX 88N20Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 55 S 4150 pF 1100 pF 340 pF td(on) 18 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 ns td(off) RG = 2.0 Ω (External), 61 ns 15 ns 146 nC 30 nC 60 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.25 RthJC RthCK TO-247 TO-264, PLUS 247 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 0.15 K/W K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 88 A Repetitive; pulse width limited by TJM 352 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.3 V 200 ns µC A 0.8 8 IF = 25A -di/dt = 100 A/µs, VR = 100 V PLUS 247 (IXFX) Outline TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-264 AA (IXFK) Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFH 88N20Q IXFK 88N20Q IXFX 88N20Q Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 90 180 VGS = 10V 9V 8V 7V 60 VGS = 10V 9V 8V 150 6V ID - Amperes ID - Amperes 75 45 30 5V 15 120 6V 90 60 5V 30 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 V DS - Volts 8 10 12 Fig. 3. Output Characteristics Fig. 4. R DS(on) Norm alized to I D25 Value vs. @ 125 Deg. C Junction Temperature 2.6 VGS = 10V 9V 8V 7V 60 VGS = 10V RDS(on) - Normalized 75 ID - Amperes 6 V DS - Volts 90 6V 45 5V 30 2.2 1.8 ID = 88A 1.4 ID = 44A 1 15 0.6 0 0 1 2 3 4 5 6 -50 7 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. R DS(on) Norm alized to I D25 Fig. 6. Drain Current vs. Case Value vs. I D Tem perature 3.1 100 VGS = 10V 2.8 80 2.5 2.2 ID - Amperes RDS(on) - Normalized 7V T J = 125ºC 1.9 1.6 1.3 40 20 T J = 25ºC 1 60 0.7 0 0 30 60 90 120 ID - Amperes © 2003 IXYS All rights reserved 150 180 210 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 88N20Q IXFK 88N20Q IXFX 88N20Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 100 80 Gfs - Siemens 80 ID - Amperes T J = -40ºC 25ºC 125ºC 60 T J = -40ºC 25ºC 125ºC 40 60 40 20 20 0 0 3 3.5 4 4.5 5 5.5 0 6 30 60 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain 120 150 180 Fig. 10. Gate Charge Voltage 200 10 160 8 VGS - Volts IS - Amperes 90 ID - Amperes 120 T J = 125ºC 80 T J = 25ºC 40 VDS = 100V ID = 44A IG = 10mA 6 4 2 0 0 0.4 0.55 0.7 0.85 1 1.15 1.3 0 V SD - Volts 30 60 90 120 150 QG - nanoCoulombs Fig. 12. Maxim um Transient Therm al Fig. 11. Capacitance Resistance 1 10000 C iss 1000 R(th)JC - (ºC/W) Capacitance - pF f = 1M Hz C oss 0.1 C rss 100 0.01 0 5 10 15 20 25 30 35 40 1 V DS - Volts 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1