IXFL38N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 1000V 29A Ω 280mΩ 300ns ISOPLUS264TM( IXFL) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 29 152 A A IA EAS TC = 25°C TC = 25°C 38 5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 380 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 260 °C °C 30..120/6.7..27 N/lbs 2500 3000 V~ V~ 10 g TL TSOLD 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s FC Mounting force VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0 V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 19A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 5.5 V ± 200 nA 100 μA 5 mA G D S G = Gate S = Source Isolated Tab D = Drain Features Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generation Laser drivers Advantages 2500 V~ Electrical isolation ISOPLUS 264TM package for clip or spring mounting Space savings High power density 280 mΩ DS99512A(05/08) IXFL38N100Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 19A, Note 1 24 40 S 13.5 nF 1035 pF 180 pF 25 ns 28 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 19A RG = 1Ω (External) Qg(on) Qgs ISOPLUS264TM (IXFL) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 19A Qgd 57 ns 15 ns 250 nC 60 nC 105 nC Note: Bottom heatsink meets 0.33 °C/W RthJC RthCS °C/W 0.13 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 38 A Repetitive, pulse width limited by TJM 152 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, VGS = 0V -di/dt = 100 A/μs VR = 100 V 300 ns QRM IRM Ref: IXYS CO 0128 1.4 9.0 μC A Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL38N100Q2 Fig. 1. Output Characteristics @ 25ºC 40 Fig. 2. Extended Output Characteristics @ 25ºC 80 VGS = 10V 35 30 60 I D - Amperes I D - Amperes VGS = 10V 70 6V 25 20 15 5V 50 6V 40 30 10 20 5 10 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 2 4 6 8 10 12 14 16 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC 3.2 VGS = 10V 6V 35 2.8 RD S (on) - Normalized 30 I D - Amperes 20 22 24 Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature 40 25 5V 20 15 10 VGS = 10V 2.4 2.0 I D = 38A I D = 19A 1.6 1.2 0.8 5 0 0 2 4 6 8 10 12 14 16 18 20 22 0.4 -50 24 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 30 VGS = 10V 2.4 T J = 125ºC 2.2 25 2.0 I D - Amperes RD S (on) - Normalized 18 1.8 1.6 1.4 20 15 10 1.2 5 T J = 25ºC 1.0 0.8 0 10 20 30 I D 40 50 - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 70 80 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFL38N100Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 80 60 T J = - 40ºC 55 70 50 60 T J = 125ºC 25ºC - 40ºC 40 35 30 gf s - Siemens I D - Amperes 45 25 20 25ºC 50 125ºC 40 30 20 15 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 10 20 Fig. 9. Source Current vs. Source-ToDrain Voltage D 40 50 60 70 - Amperes Fig. 10. Gate Charge 10 90 VDS = 500V I D = 19A I G = 10mA 80 8 70 60 VG S - Volts I S - Amperes 30 I V GS - Volts 50 40 T J = 125ºC 30 20 6 4 2 T J = 25ºC 10 0 0 0.2 0.4 0.6 0.8 1.0 0 1.2 50 100 V SD - Volts Q G 150 200 250 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100000 1 f = 1MHz 10000 Z(th) J C - (ºC/W) Capacitance - pF Ciss Coss 1000 0.1 0.01 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_38N100Q2(95) 5-27-08-B