Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS(on) trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 29 A IDM TC = 25°C, Pulse Width Limited by TJM 120 A IA TC = 25°C 19 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 520 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic Body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s 2500 3000 V~ V~ FC Mounting Force 40..120/4.5..27 N/lb. 8 g Weight G D G = Gate S = Source BVDSS VGS = 0V, ID = 3mA 1000 Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z International Standard Packages z miniBLOC, with Aluminium Nitride Isolation z Low Drain to Tab Capacitance(<30pF) z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Fast Intrinsic Diode Advantages VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS , VGS = 0V RDS(on) VGS = 10V, ID = 19A, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved z V 6.5 V ± 300 nA 50 μA 4 mA 230 mΩ D = Drain z z Characteristic Values Min. Typ. Max. ISOLATED TAB Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) S Easy Assembly Space Savings High Power Density Applications z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls DS99755B(7/09) IXFL38N100P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 20V, ID = 19A, Note 1 29 S 24 nF 1245 pF 80 pF 0.78 Ω 74 ns 55 ns 71 ns 40 ns 350 nC 150 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 19A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 19A Qgd RthJC 0.15 Source-Drain Diode TJ = 25°C Unless Otherwise Specified) VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD trr QRM IRM IF = IS, VGS = 0V, Note 1 VR = 100V, VGS = 0V INCHES MIN MAX MILLIMETER MIN MAX 0.190 0.205 4.83 0.102 0.118 2.59 3.00 nC A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 0.24 °C/W b1 0.063 0.072 1.60 1.83 °C/W b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 5.21 3.81 BSC 11.43 BSC 19.81 20.83 L1 0.080 0.102 2.03 2.59 38 A Q 0.210 0.235 5.33 5.97 150 A Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 1.5 IF = 25A, -di/dt = 100A/μs SYM A Characteristic Values Min. Typ. Max. IS PIN 1 = Gate PIN 2 = Source PIN 3 = Drain Tap 4 = Electricall isolated 2500V A1 150 RthCS ISOPLUS i5-PakTM HV (IXFL) Outline V 300 ns T 0.801 0.821 20.34 20.85 2.5 μC U 0.065 0.080 1.65 2.03 17 A Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL38N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 100 40 VGS = 15V 11V 10V 35 VGS = 15V 11V 90 80 30 ID - Amperes ID - Amperes 70 25 9V 20 15 10V 60 50 40 9V 30 10 8V 20 5 8V 10 7V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 40 3.0 VGS = 15V 10V 35 VGS = 10V 2.6 R DS(on) - Normalized 30 9V ID - Amperes 20 VDS - Volts VDS - Volts 25 20 8V 15 10 7V 5 2.2 I D = 38A 1.8 I D = 19A 1.4 1.0 0.6 6V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 32 2.6 VGS = 10V 2.4 28 15V - - - - 2.2 24 TJ = 125ºC 2.0 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 20 16 12 1.4 8 1.2 TJ = 25ºC 4 1.0 0.8 0 0 10 20 30 40 50 60 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFL38N100P Fig. 8. Transconductance Fig. 7. Input Admittance 65 60 60 TJ = - 40ºC 55 50 40 45 g f s - Siemens ID - Amperes 50 TJ = 125ºC 25ºC - 40ºC 30 20 40 25ºC 35 30 125ºC 25 20 15 10 10 5 0 0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 90 450 500 Fig. 10. Gate Charge 16 110 100 VDS = 500V 14 I D = 19A 90 I G = 10mA 12 80 70 VGS - Volts IS - Amperes 40 ID - Amperes 60 50 TJ = 125ºC 40 30 10 8 6 4 TJ = 25ºC 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 50 100 150 VSD - Volts 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000.00 100,000 RDS(on) Limit Ciss 10,000 ID - Amperes Capacitance - PicoFarads 1ms Coss 25µs 100ms DC 10.00 1,000 100µs 10ms 100.00 1.00 100 TJ = 150ºC 0.10 Crss TC = 25ºC Single Pulse f = 1 MHz 10 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFL38N100P Fig. 13. Maximum Transient Thermal Impedance 1.000 Z(th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_38N100(99)7-14-09-D