HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 (Electrically Isolated Backside) VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 44 176 44 A A A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 550 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Weight Symbol 300 °C 2500 3000 V~ V~ 5 Test Conditions g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 800 V VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Note 1 © 2003 IXYS All rights reserved ISOPLUS-264TM G E G = Gate E = Emitter 100 µA 2 mA 0.165 Ω (TAB) C = Collector Tab = Collector Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers Switched-mode and resonant-mode power supplies DC choppers z z z ±100 nA TJ = 25°C TJ = 125°C C AC motor control Advantages z Easy assembly z Space savings z High power density DS99085(09/03) IXFL 44N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = IT Note 2 50 S 10000 pF 1300 pF C rss 330 pF td(on) 35 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External) 32 48 ns 100 ns 24 ns 380 nC 70 nC 170 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.225 K/W RthCK 0.05 Source-Drain Diode Symbol ISOPLUS 264 OUTLINE Test Conditions K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 t rr IF = IS,-di/dt = 100 A/µs, VR = 100 V 1.2 8 QRM IRM 44 A 176 A 1.3 V 250 ns µC A Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. Test current IT = 22A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343