IXFL80N50Q2 HiPerFETTM Power MOSFET Q2-Class (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr ISOPLUS264TM( IXFL) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 55 320 A A IA EAS TC = 25°C TC = 25°C 80 5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 380 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 260 °C °C 30..120/6.7..27 N/lbs 2500 3000 V~ V~ 10 g Maximum Ratings TL TSOLD 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s FC Mounting force VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Weight Symbol 500V 55A Ω 66mΩ 250ns Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 40A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 5.5 V ± 200 nA 100 μA 5 mA G D S G = Gate S = Source Isolated Tab D = Drain Features Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generation Laser drivers Advantages 2500 V~ Electrical isolation ISOPLUS 264TM package for clip or spring mounting Space savings High power density 66 mΩ DS99360B(05/08) IXFL80N50Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 40A, Note 1 50 65 S 12.8 nF 1640 pF 440 pF 29 ns 25 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 40A RG = 1Ω (External) Qg(on) Qgs ISOPLUS264TM (IXFL) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 40A Qgd 60 ns 11 ns 250 nC 80 nC 120 nC Note: Bottom heatsink meets 0.33 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 80 A Repetitive, pulse width limited by TJM 320 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, VGS = 0V -di/dt = 100 A/μs VR = 100 V 250 ns QRM IRM Ref: IXYS CO 0128 1.4 12 μC A Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL80N50Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 80 200 VGS = 10V 70 VGS = 10V 180 8V 8V 160 140 7V I D - Amperes I D - Amperes 60 50 40 6V 30 120 100 7V 80 60 20 6V 40 10 20 5V 5V 0 0 0 1 2 3 VD S 4 5 0 6 2 4 6 8 VD - Volts Fig. 3. Output Characteristics @ 125ºC 10 S 12 14 16 18 20 - Volts Fig. 4. RDS(on) Normalized to I D = 40A Value vs. Junction Temperature 80 3.2 VGS = 10V 70 7V R D S ( o n ) - Normalized I D - Amperes 60 50 6V 40 30 20 10 VGS = 10V 2.8 2.4 2.0 ID = 80A ID = 40A 1.6 1.2 0.8 5V 0 0.4 0 2 4 6 VD S 8 10 12 -50 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 40A Value vs. Drain Current Fig. 6. Drain Curre nt v s. Case Te mpe rature 3.0 60 VGS = 10V 2.6 TJ = 125ºC 2.2 50 I D - Amperes R D S ( o n ) - Normalized -25 - Volts 1.8 1.4 40 30 20 TJ = 25ºC 1.0 10 0.6 0 0 20 40 60 80 I D 100 120 140 160 180 200 - Amperes © 2008 IXYS CORPORATION, All rights reserved -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFL80N50Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 120 120 100 TJ = - 40ºC g f s - Siemens I D - Amperes 100 TJ = 125ºC 25ºC - 40ºC 80 60 80 25ºC 60 125ºC 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage D 100 120 140 160 180 - Amperes Fig. 10. Gate Charge 10 240 VDS = 250V 9 200 ID = 40A 8 TJ = 25ºC 160 IG = 10m A 7 TJ = 125ºC VG S - Volts I S - Amperes 80 I 120 80 6 5 4 3 2 40 1 0 0 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 40 80 Q V S D - Volts 120 G 160 200 240 280 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100000 1 Ciss 10000 Z(th) J C - (ºC/W) Capacitance - pF f = 1MHz Coss 1000 0.1 0.01 Crss 100 0 5 10 15 VD 20 S 25 30 35 40 - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_80N50Q2(95) 5-2-08-G