PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS = 200 V ID25 = 115 A Ω RDS(on) ≤ 18 mΩ ≤ 150 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 115 A ID(RMS) External lead current limit 100 A IDM TC = 25°C, pulse width limited by TJM 280 A IAR TC = 25°C 60 A miniBLOC, SOT-227 B (IXFN) E153432 S G S D EAR TC = 25°C 100 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 680 W -55 ... +175 175 -55 ... +150 °C °C °C Features 300 °C z 2500 V~ z 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. z TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute Md Terminal torque Mounting torque Weight 30 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 200 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V G = Gate S = Source Either source tab S can be used forsource current or Kelvin gate return. z RDS(on) TJ = 150°C VGS = 10 V, ID = 70 A VGS = 15 V, ID = 140A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved 14 V ±100 nA 25 250 μA μA 18 mΩ mΩ International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z z 5.0 D = Drain Easy to mount Space savings High power density DS99245E(03/06) IXFN 140N20P Symbol Test Conditions gfs VDS= 10 V; ID = 70 A Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 84 S 7500 pF 1630 pF 280 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 70 A td(off) RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 110 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 70 A Qgd RthJC SOT-227B miniBLOC 0.22 K/W RthCS 0.05 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 140 A ISM Repetitive 280 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = 25 A -di/dt = 100 A/μs VR = 100 V 0.6 6 200 ns μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 140N20P Fig. 1. Output Characte r is tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 300 140 V GS = 10V 9V 8V 120 9V 240 100 210 I D - Amperes I D - Amperes V GS = 10V 270 80 7V 60 40 6V 8V 180 150 120 7V 90 60 20 6V 30 5V 0 0 0 0.5 1 1.5 2 0 2.5 1 2 3 4 5 6 7 8 9 10 V D S - V olts V D S - V olts Fig. 3. Output Characte r is tics @ 150ºC Fig. 4. RDS(on ) Norm alize d to ID = 70A V alue vs . Junction Te m pe r atur e 140 V GS = 10V 9V 8V 3 R D S ( o n ) - Normalized 120 I D - Amperes 100 7V 80 60 6V 40 20 V GS = 10V 2.5 I D = 140A 2 I D = 70A 1.5 1 5V 0 0.5 0 1 2 3 4 5 6 -50 -25 0 V D S - V olts 50 75 100 125 150 175 150 175 Fig . 6. Dr ain Cur r e n t vs . Cas e T e m p e r atu r e Fig. 5. RDS(on) Nor m alize d to ID = 70A V alue vs . Dr ain Cur re nt 80 4 TJ = 175 ºC 70 3.5 60 3 2.5 I D - Amperes R D S ( o n ) - Normalized 25 TJ - Degrees Centigrade V GS = 10V V GS = 15V 2 1.5 50 40 30 20 1 10 TJ = 25 ºC 0 0.5 0 50 100 150 200 I D - A mperes © 2006 IXYS All rights reserved 250 300 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade IXFN 140N20P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 225 120 110 200 100 90 80 - Siemens 150 125 60 fs 100 70 25 ºC 40 150 ºC TJ = 150 ºC 50 25 ºC 30 -40 ºC 20 25 TJ = -40 ºC 50 75 g I D - Amperes 175 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 40 80 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 160 200 240 Fig. 10. Gate Char ge 10 350 V DS = 100V 9 300 I D = 70A 8 250 I G = 10m A 7 V G S - Volts I S - Amperes 120 I D - A mperes 200 150 6 5 4 3 100 TJ = 150 ºC 2 50 TJ = 25 ºC 1 0 0 0.4 0.6 0.8 1 1.2 0 1.4 25 50 75 V S D - V olts Q 100 125 150 175 200 225 250 G - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 100,000 1000 25µs R DS (on) Lim it Ciss 10,000 I D - Amperes Capacitance - picoFarads f = 1M Hz Cos s 1,000 100 100µs 1m s 10m s 10 Crs s DC TJ = 175 ºC TC = 25 ºC 100 1 0 5 10 15 20 25 30 35 40 V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - V olts 1000 IXFN 140N20P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_140N20P (88) 01-23-06-B.xls