PolarHVTM HiPerFET Power MOSFET IXFN 48N60P VDSS = 600 V ID25 = 40 A Ω RDS(on) ≤ 140 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 40 A IDM TC = 25°C, pulse width limited by TJM 110 A IAR TC = 25°C 48 A EAR TC = 25°C 70 mJ EAS TC = 25°C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 625 W -55 ... +150 150 -55 ... +150 300 2500 3000 °C °C °C °C V~ V~ TJ TJM Tstg TL VISOL Md Maximum Ratings 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque S G 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. Weight miniBLOC, SOT-227 B (IXFN) E153432 30 S D G = Gate S = Source Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride z z g z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 4 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V 5.5 V ±200 nA 25 1000 μA μA 140 mΩ D = Drain isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99337E(03/06) IXFN 48N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 53 S 8860 pF 850 pF Crss 60 pF td(on) 30 ns gfs VDS = 20 V; ID = 24 A, pulse test 35 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 24 A 25 ns td(off) RG = 2 Ω (External) 85 ns 22 ns 150 nC 50 nC 50 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 24 A Qgd RthJC RthCS 0.2 SOT-227B °C/W °C/W 0.05 Source-Drain Diode SOT-227B (IXFN) Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 48 A ISM Repetitive 110 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/μs 200 ns QRM IRM VR = 100V 0.8 6.0 μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 48N60P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Characte r is tics @ 25º C @ 25º C 50 V GS = 10V 45 40 V GS = 10V 120 8V 7V 8V 100 I D - Amperes I D - Amperes 35 30 25 6V 20 15 7V 80 60 40 6V 10 20 5 5V 5V 0 0 0 1 2 3 4 5 0 6 4 8 12 Fig. 3. Output Characte r is tics @ 125ºC 24 3.1 V GS = 10V 45 R D S ( o n ) - Normalized 35 6V 30 25 20 15 10 V GS = 10V 2.8 7V 40 I D - Amperes 20 Fig. 4. RDS(on ) Norm alize d to ID = 24A V alue vs . Junction Te m pe r atur e 50 2.5 2.2 I D = 48A 1.9 1.6 I D = 24A 1.3 1 5V 0.7 5 0.4 0 0 2 4 6 8 10 12 -50 14 -25 0 V D S - V olts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e ID = 24A V alue vs . Dr ain Cur re nt 3.4 45 V GS = 10V 3.1 40 TJ = 125ºC 2.8 35 2.5 I D - Amperes R D S ( o n ) - Normalized 16 V D S - V olts V D S - V olts 2.2 1.9 1.6 1.3 30 25 20 15 10 TJ = 25ºC 5 1 0 0.7 0 20 40 60 80 I D - A mperes © 2006 IXYS All rights reserved 100 120 140 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFN 48N60P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 100 80 90 70 80 - Siemens TJ = 125ºC 25ºC -40ºC 40 70 30 60 50 fs 50 40 TJ = -40ºC g I D - Amperes 60 30 25ºC 125ºC 20 20 10 10 0 0 4 4.5 5 5.5 6 6.5 7 0 10 20 30 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 50 60 70 80 90 140 160 Fig. 10. Gate Char ge 10 160 140 9 V DS = 300V 8 I D = 24A 7 I G = 10m A 120 100 V G S - Volts I S - Amperes 40 I D - A mperes 80 60 5 4 3 TJ = 125ºC 40 6 2 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 20 40 V S D - V olts 60 80 100 120 Q G - nanoCoulombs Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce Fig. 11. Capacitance 100000 1. 00 C is s 10000 R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z C os s 1000 0. 10 0. 01 C rs s 100 10 0. 00 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 0. 0001 0. 001 0. 01 0. 1 Puls e W idth - Sec onds 1 10