Preliminary Technical Information IXFN56N90P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 56 A IDM TC = 25°C, pulse width limited by TJM 168 A IA TC = 25°C 28 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1000 W -55 ... +150 °C 150 °C z -55 ... +150 °C z 300 °C z 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque S G S D G = Gate S = Source Weight 30 g D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z t = 1min t = 1s 900V 56A Ω 135mΩ 300ns z International standard package miniBLOC, with Aluminium nitride isolation Avalanche Rated Low package inductance Fast intrinsic diode Advantages z z Low gate drive requirement High power density Applications: z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 8mA 900 VGS(th) VDS = VGS, ID = 3mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 28A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 6.5 V ± 200 nA z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 50 μA 5 mA 135 mΩ DS100066(10/08) IXFN56N90P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 28A, Note 1 27 RGi 44 S Gate input resistance 0.85 Ω 23 nF VGS = 0V, VDS = 25V, f = 1MHz 1385 pF 106 pF Ciss Coss SOT-227B (IXFN) Outline Crss td(on) Resistive Switching Times 74 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 80 ns td(off) RG = 1Ω (External) 93 ns 38 ns 375 nC 80 nC 145 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.125 °C/W RthJC RthCS 0.05 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM (M4 screws (4x) supplied) °C/W Characteristic Values Min. Typ. Max. 56 A Repetitive, pulse width limited by TJM 224 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 28A, -di/dt = 100A/μs VR = 100V 1.8 μC 15 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN56N90P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 120 VGS = 10V 9V VGS = 10V 9V 100 40 8V ID - Amperes ID - Amperes 50 30 7V 20 80 8V 60 40 10 7V 20 6V 6V 0 0 0 1 2 3 4 5 6 7 8 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 28A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 2.8 60 VGS = 10V 8V 2.6 VGS = 10V 2.4 RDS(on) - Normalized 50 ID - Amperes 12 VDS - Volts VDS - Volts 40 7V 30 20 2.2 2.0 I D = 56A 1.8 I D = 28A 1.6 1.4 1.2 1.0 6V 10 0.8 0.6 5V 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 28A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 60 2.6 VGS = 10V 2.4 50 TJ = 125ºC 2.2 40 2.0 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 30 20 1.4 1.2 10 TJ = 25ºC 1.0 0.8 0 0 10 20 30 40 50 60 70 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 80 90 100 110 120 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN56N90P Fig. 7. Input Admittance Fig. 8. Transconductance 90 90 80 80 70 70 50 g f s - Siemens TJ = 125ºC 25ºC - 40ºC 60 ID - Amperes TJ = - 40ºC 40 30 125ºC 50 40 30 20 20 10 10 0 25ºC 60 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 10 20 VGS - Volts 30 40 50 60 70 80 90 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 180 160 9 VDS = 450V 8 I G = 10mA I D = 28A 140 VGS - Volts IS - Amperes 7 120 100 80 60 TJ = 125ºC 6 5 4 3 40 2 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 50 100 VSD - Volts 200 250 300 350 400 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads 150 QG - NanoCoulombs 1,000 Coss 0.100 0.010 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_56N90P(99)10-24-08