IXYS IXFN60N80P

PolarHVTM HiPerFET
Power MOSFET
IXFN 60N80P
VDSS
ID25
= 800 V
= 53 A
Ω
RDS(on) ≤ 140 mΩ
≤ 250 ns
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
800
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
800
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
53
250
A
A
IAR
TC = 25° C
30
A
EAR
TC = 25° C
100
mJ
EAS
TC = 25° C
5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 2 Ω
20
V/ns
PD
TC = 25° C
1040
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
2500
3000
°C
V~
V~
TJ
TJM
Tstg
TL
VISOL
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
IISOL ≤1 mA
t=1s
Md
Mounting torque
Terminal connection torque
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 3 mA
800
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, Note 1
© 2006 IXYS All rights reserved
TJ = 125° C
V
5.0
V
±200
nA
25
3000
µA
µA
140
mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
l
l
l
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
DS99562E(02/06)
IXFN 60N80P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = IT, Note 1
gfs
35
67
S
18
nF
1200
pF
44
pF
36
ns
29
ns
110
ns
26
ns
250
nC
90
nC
78
nC
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
td(off)
RG = 1 Ω (External)
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
0.12
RthJC
Source-Drain Diode
°C/W
°C/W
0.05
RthCS
SOT-227B Outline
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
60
A
ISM
Repetitive
150
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
250
ns
QRM
IRM
VR = 100V
0.6
6.0
µC
A
Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %
Test current IT = 30 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN 60N80P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
120
V GS = 10V
7V
V GS = 10V
7V
55
50
100
40
I D - Amperes
I D - Amperes
45
35
6V
30
25
20
80
60
6V
40
15
10
20
5
5V
5V
0
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
15
18
21
24
27
30
Fig. 4. R DS(on) Normalized to ID = 30A Value
v s. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
60
3.2
V GS = 10V
7V
55
50
V GS = 10V
2.8
40
R DS(on) - Normalized
45
I D - Amperes
12
V DS - Volts
V DS - Volts
6V
35
30
25
20
15
2.4
2
I D = 60A
I D = 30A
1.6
1.2
5V
10
0.8
5
0
0.4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
V DS - Volts
25
50
75
100
125
150
T J - Degrees Centigrade
Fig. 5. R DS(on) Normalized to ID = 30A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
60
V GS = 10V
2.6
55
TJ = 125ºC
50
2.4
45
2.2
I D - Amperes
R DS(on) - Normalized
0
2
1.8
1.6
35
30
25
20
TJ = 25ºC
1.4
40
15
1.2
10
1
5
0
0.8
0
20
40
60
I D - Amperes
© 2006 IXYS All rights reserved
80
100
120
-50
-25
0
25
50
75
T J - Degrees Centigrade
100
125
150
IXFN 60N80P
Fig. 8. Transconductance
Fig. 7. Input Admittance
80
130
120
70
110
100
TJ = 125ºC
25ºC
- 40ºC
50
g f s - Siemens
I D - Amperes
60
40
30
90
80
TJ = - 40ºC
25ºC
125ºC
70
60
50
40
20
30
20
10
10
0
0
4
4.25
4.5
4.75
5
5.25
5.5
5.75
6
6.25
6.5
6.75
0
10
20
30
V GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
50
60
70
80
Fig. 10. Gate Charge
180
10
160
9
V DS = 400V
I D = 30A
8
140
I G = 10mA
7
V GS - Volts
120
I S - Amperes
40
I D - Amperes
100
80
60
TJ = 125ºC
6
5
4
3
40
2
TJ = 25ºC
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
1.4
20
40
60
V SD - Volts
80
100 120 140 160 180 200 220 240 260
Q G - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
1.000
100,000
10,000
C iss
R (th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
1,000
C oss
0.100
0.010
100
C rss
10
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.001
0.0001
0.001
0.01
0.1
Pulse W idth - Seconds
1
10