Advance Technical Information IXFA130N10T2 IXFP130N10T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier = 100V = 130A Ω ≤ 9.1mΩ TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 ILRMS TC = 25°C (Chip Capability) Lead Current Limit, RMS 130 120 A A IDM TC = 25°C, Pulse Width Limited by TJM 300 A IA TC = 25°C 65 A EAS TC = 25°C 800 mJ dV/dt IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C 20 V/ns PD TC = 25°C 360 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220AB (IXFP) G G = Gate S = Source z z z z z z BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 1mA 2.0 IGSS VGS = ± 20V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 10 μA TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 z V 4.5 V 500 μA 9.1 mΩ International Standard Packages 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dV/dt Rated Low RDS(on) Easy to Mount Space Savings High Power Density Applications z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages z Characteristic Values Min. Typ. Max. D (Tab) Features z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) DS DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100111(10/09) IXFA130N10T2 IXFP130N10T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 45 Ciss Coss 68 S 6600 pF 640 pF 133 pF 16 ns 38 ns 24 ns 25 ns 130 nC 35 nC 42 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.42 °C/W RthJC RthCH TO-263 (IXFA) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 130 A ISM Repetitive, Pulse Width Limited by TJM 520 A VSD IF = 65A, VGS = 0V, Note 1 1.3 V trr IF = 65A, VGS = 0V 100 ns IRM QRM -di/dt = 100A/μs VR = 50V 4.8 A 156 nC 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 TO-220 (IXFP) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA130N10T2 IXFP130N10T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 140 VGS = 15V 10V 9V 120 8V 250 100 7V 80 ID - Amperes ID - Amperes VGS = 15V 10V 9V 300 60 6V 40 8V 200 150 7V 100 6V 50 20 5V 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1.4 2 4 6 3.4 140 VGS = 15V 10V 9V 8V 14 2.6 R DS(on) - Normalized ID - Amperes 12 VGS = 10V 3.0 100 7V 80 60 6V 40 I D = 130A 2.2 I D = 65A 1.8 1.4 1.0 20 0.6 5V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 4.5 140 External Lead Current Limit VGS = 10V 4.0 15V 120 ---- TJ = 175ºC 3.5 100 3.0 ID - Amperes R DS(on) - Normalized 10 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 120 8 VDS - Volts VDS - Volts 2.5 2.0 80 60 40 1.5 1.0 20 TJ = 25ºC 0 0.5 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXFA130N10T2 IXFP130N10T2 Fig. 7. Input Admittance Fig. 8. Transconductance 160 100 TJ = - 40ºC 90 140 80 25ºC 120 g f s - Siemens ID - Amperes 70 100 80 60 TJ = 125ºC 25ºC - 40ºC 40 150ºC 60 50 40 30 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 160 180 10 VDS = 50V 9 300 I D = 65A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 120 Fig. 10. Gate Charge 350 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 10 20 30 40 VSD - Volts 50 60 70 80 90 100 110 120 130 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 1,000 10ms Coss 25µs 100µs RDS(on) Limit Ciss f = 1 MHz ID - Amperes Capacitance - PicoFarads 100 ID - Amperes 1ms 100 100ms 10 DC TJ = 175ºC TC = 25ºC Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_130N10T2(V5)9-30-09-A IXFA130N10T2 IXFP130N10T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 52 60 RG = 3.3Ω 55 VDS = 50V 45 t r - Nanoseconds t r - Nanoseconds RG = 3.3Ω 48 VGS = 10V 50 40 I 35 D = 130A 30 25 I D = 65A VGS = 10V VDS = 50V 44 TJ = 25ºC 40 36 TJ = 125ºC 32 20 28 15 24 10 25 35 45 55 65 75 85 95 105 115 65 125 70 75 80 85 90 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 40 td(on) - - - - 110 115 120 125 150 25 I D = 130A, 65A 100 20 td(off) - - - - 45 VDS = 50V 40 40 35 35 I D = 65A 30 30 25 25 I D = 130A 20 20 t d(off) - Nanoseconds 30 tf RG = 3.3Ω, VGS = 10V t d(on) - Nanoseconds 200 50 15 15 0 10 3 4 5 6 7 8 9 15 10 10 25 35 45 55 RG - Ohms tf td(off) - - - - RG = 3.3Ω, VGS = 10V 95 105 115 10 125 35 TJ = 125ºC 30 23 25 22 TJ = 25ºC 21 td(off) - - - - 150 TJ = 125ºC, VGS = 10V 45 40 25 tf 110 VDS = 50V 90 I D 120 = 65A, 130A 70 90 50 60 30 30 20 15 20 65 70 75 80 85 90 95 100 105 110 115 120 125 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 10 130 10 0 3 4 5 6 7 RG - Ohms 8 9 10 t d(off) - Nanoseconds 26 180 50 t d(off) - Nanoseconds VDS = 50V 24 85 130 55 27 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 29 28 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 130 50 45 35 TJ = 125ºC, VGS = 10V VDS = 50V t r - Nanoseconds 105 50 t f - Nanoseconds tr 100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 300 250 95 ID - Amperes IXFA130N10T2 IXFP130N10T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_130N10T2(V5)9-30-09-A