Advance Technical Information IXFP4N100QM HiPerFETTM Power MOSFET Q-Class VDSS = 1000V ID25 = 2.2A Ω RDS(on) ≤ 3.0Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 2.2 A IDM TC = 25°C, pulse width limited by TJM 16 A IA TC = 25°C 4 A EAS TC = 25°C 700 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 46 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting Torque Weight OVERMOLDED (IXFP...M) OUTLINE G DS G = Gate S = Source D = Drain Features Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 2A, Note 1 Characteristic Values Min. Typ. Max. 1000 3.0 V 5.0 High Power Density Easy to Mount Space Savings V ±100 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 25 μA 1 mA 3.0 Ω DS100165(06/09) IXFP4N100QM Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 2.5 VDS = 20V, ID = 2A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 4.3 S 1185 pF 130 pF 65 pF 17 ns 15 ns 32 ns 18 ns 43.5 nC 6.2 nC 23.0 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 2A, RG = 4.7Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 2A Qgd OVERMOLDED TO-220 (IXFP...M) 1 2 3 2.7 °C/W RthJC Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 4A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 250 ns nC A 480 6.16 Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP4N100QM Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 4.0 8 VGS = 10V 7V 3.5 VGS = 10V 7V 7 3.0 6 6V 2.5 ID - Amperes ID - Amperes 6V 2.0 5V 1.5 1.0 5 4 3 2 0.5 5V 1 4V 4V 0.0 0 0 2 4 6 8 10 12 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 4.0 3.0 VGS = 10V 7V 3.5 VGS = 10V 2.6 6V R DS(on) - Normalized ID - Amperes 3.0 5V 2.5 2.0 1.5 2.2 I D = 4A 1.8 I D = 2A 1.4 1.0 1.0 0.6 4V 0.5 0.0 0.2 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 2.4 VGS = 10V 2.4 2.0 TJ = 125ºC 2.0 1.6 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 1.2 0.8 1.2 TJ = 25ºC 0.4 1.0 0.8 0.0 0 1 2 3 4 5 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 6 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFP4N100QM Fig. 8. Transconductance Fig. 7. Input Admittance 8 9 7 8 TJ = - 40ºC 7 6 ID - Amperes 5 g f s - Siemens TJ = 125ºC 25ºC - 40ºC 4 3 25ºC 6 5 125ºC 4 3 2 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 VGS - Volts 4 5 6 7 8 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 12 VDS = 500V I D = 2A 10 8 I G = 10mA VGS - Volts IS - Amperes 8 6 6 4 TJ = 125ºC 4 TJ = 25ºC 2 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 5 10 15 20 25 30 35 40 45 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10.00 10,000 Ciss 1,000 Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1.00 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_4N100Q(4U)6-25-09