PolarHVTM HiPerFET Power MOSFET VDSS = 800 V ID25 = 10 A Ω RDS(on) ≤ 500 mΩ ≤ 250 ns trr IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 11 A IDM TC = 25°C, pulse width limited by TJM 60 A IAR TC = 25°C 10 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω 10 V/ns PD TC = 25°C 166 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1minute, leads-to-tab FC Mounting Force Weight ISOPLUS220 ISOPLUS247 (IXFC) (IXFR) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) N/lb N/lb 2 5 g g Characteristic Values Min. Typ. Max. 800 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 10 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V~ 11..65 / 2.5..15 20..120 / 4.5..25 VGS = 0 V, ID = 250 μA RDS(on) G 2500 BVDSS ISOPLUS220TM (IXFC) E153432 V 5.0 V ±100 nA 25 1 μA mA 500 mΩ D Isolated back surface S ISOPLUS247TM (IXFR) E153432 Isolated back surface G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z Easy assembly z z Space savings High power density DS99602E(08/06) IXFC 20N80P IXFR 20N80P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 10 A, pulse test 12 23 S 4680 pF 360 pF Crss 28 pF td(on) 22 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = VDSS , ID = 10 A 24 ns td(off) RG = 3 Ω (External) 70 ns tf 25 ns Qg(on) 85 nC 25 nC 27 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A Qgd ISOPLUS220 (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 0.75 °C/W RthJC °C/W 0.21 RthCS Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive 60 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 20A, -di/dt = 100 A/μs 250 ns IRM VR = 100 V; VGS = 0 V QRM 8 A 0.8 μC IXYS CO 0177 R0 ISOPLUS247 (IXFR) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 20N80P IXFR 20N80P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte ris tics @ 25º C @ 25 º C 36 20 V GS = 10V 18 16 7V 28 6V I D - Amperes 14 I D - Amperes V GS = 10V 32 7V 6V 12 10 8 6 24 20 16 12 5V 4 8 2 4 5V 0 0 0 2 4 6 8 10 0 12 3 6 9 Fig. 3. Output Characte r is tics 18 21 24 27 30 2.6 20 V GS = 10V 18 2.4 7V R D S ( o n ) - Normalized 14 12 6V 10 8 6 4 2 V GS = 10V 2.2 16 I D - Amperes 15 Fig. 4. RDS(on ) Norm alize d to ID = 10A V alue vs . Junction Te m pe r atur e @ 125º C 5V 2 1.8 1.6 I D = 20A 1.4 1.2 I D = 10A 1 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 22 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e ID = 10A V alue vs . Dr ain Cur re nt 12 2.6 11 2.4 V GS = 10V 10 TJ = 125 º C 2.2 9 2 I D - Amperes R D S ( o n ) - Normalized 12 V D S - V olts V D S - V olts 1.8 1.6 1.4 8 7 6 5 4 3 1.2 2 TJ = 25 º C 1 1 0.8 0 0 5 10 15 20 25 I D - A mperes © 2006 IXYS All rights reserved 30 35 40 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFC 20N80P IXFR 20N80P Fig. 7. Input Adm ittance Fig. 8. Tr ans conductance 40 24 35 20 TJ = -40 º C - Siemens 16 TJ = 125 º C 12 25 º C 20 fs -40 º C 8 25 º C 125 º C 25 15 g I D - Amperes 30 10 4 5 0 0 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 0 5.75 5 10 Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage 20 25 Fig. 10. Gate Char ge 10 60 50 40 V G S - Volts I S - Amperes 15 I D - A mperes V G S - V olts 30 TJ = 125 º C 20 9 V DS = 400V 8 I D = 10A 7 I G = 10m A 6 5 4 3 TJ = 25 º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 30 V S D - V olts Q 40 50 60 70 80 90 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The r m al Re s is tance Fig. 11. Capacitance 10000 1.00 C is s R ( t h ) J C - ºC / W Capacitance - picoFarads G 1000 C os s 100 f = 1MH z 0.10 C rs s 10 0.01 0 5 10 15 20 25 30 35 40 V D S - V olts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N80P (7J) 8-23-06B