HiPerFETTM Power MOSFET Q2-Class IXFR40N50Q2 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 29 A IDM TC = 25°C, pulse width limited by TJM 160 A IA TC = 25°C 40 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 320 W Features -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C • Double metal process for low gate resistance • International standard package • Epoxy meet UL 94 V-0, flammability classification • Low Rds(on), low Qg • Avalanche energy and current rated • Fast intrinsic recfifier TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 20A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved Isolated Tab G = Gate S = Source D = Drain Applications • DC-DC converters • Switched-mode and resonant-mode power supplies, >500kHz switching • DC choppers • Pulse generation • Laser drivers V Advantages 5.5 V ± 200 nA • Easy to mount • Space savings • High power density 50 μA 2 mA 170 mΩ DS99075C(05/08) IXFR40N50Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 20A, Note 1 15 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz ISOPLUS247 (IXFR) Outline 28 S 4850 pF 680 pF Crss 170 pF td(on) 17 ns tr Resistive Switching Times 13 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 20A 42 ns tf RG = 1Ω (External) 8 ns 110 nC 25 nC 50 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 20A Qgd 0.39 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W Characteristic Values Min. Typ. Max. 40 A Repetitive, pulse width limited by TJM 160 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1 μC 9 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR40N50Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 40 90 VGS = 10V 35 VGS = 10V 80 7V 70 30 6V 25 20 I D - Amperes I D - Amperes 8V 5.5V 15 5V 10 60 7V 50 40 6V 30 20 4.5V 5 10 0 5V 0 0 1 2 3 4 5 6 0 7 3 6 9 12 15 18 21 24 27 30 VD S - Volts VD S - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 40 3.2 VGS = 10V 35 7V R D S ( o n ) - Normalized I D - Amperes 30 5.5V 25 VGS = 10V 2.8 6V 20 5V 15 10 4.5V 2.4 2.0 I D = 40A 1.6 I D = 20A 1.2 0.8 5 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 V D S - Volts Fig. 5. RDS(on) Normalized to 0.5 I D25 Value 50 75 100 125 150 125 150 Fig. 6. Drain Current vs. Case Temperature vs. I D 3.4 32 VGS = 10V 3.0 28 TJ = 125ºC 24 2.6 I D - Amperes R D S ( o n ) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 1.4 20 16 12 8 TJ = 25ºC 1.0 4 0.6 0 0 10 20 30 40 I D 50 60 - Amperes © 2008 IXYS CORPORATION, All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFR40N50Q2 Fig. 8. Transconductance 55 45 50 40 45 TJ = - 40ºC 40 35 30 TJ = 125ºC 25 25ºC - 40ºC g f s - Siemens I D - Amperes Fig. 7. Input Admittance 50 20 15 25ºC 35 30 125ºC 25 20 15 10 10 5 5 0 0 3.0 3.5 4.0 4.5 VG S 5.0 5.5 6.0 0 6.5 5 10 15 I Fig. 9. Source Current vs. Source-To-Drain Voltage 120 110 9 V DS = 250V 100 8 ID = 20A 7 IG = 10mA VG S - Volts 80 70 60 50 TJ = 125ºC 40 D 30 35 40 45 50 55 60 65 - Amperes Fig. 10. Gate Charge 10 90 I S - Amperes 20 25 - Volts 6 5 4 3 30 20 2 TJ = 25ºC 1 10 0 0 0.4 0.5 0.6 0.7 VS 0.8 D 0.9 1.0 1.1 1.2 0 20 30 Q 40 G 50 60 70 80 90 100 110 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 C iss I D - Amperes Capacitance - picoFarads 10 - Volts C oss 1000 RDS(on) Limit 100 25µs 100µs 1ms 10 C rss TC = 25ºC f = 1MHz 100 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. DC Single Pulse 1 0 10m s TJ = 150ºC 10 100 VD S - Volts 1000 IXFR40N50Q2 Fig. 13. M aximum Transient Thermal Impedance Z ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 100 1000 10000 Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_40N50Q2 (84) 05-28-08-C