Advance Technical Information IXFH340N075T2 IXFT340N075T2 TrenchT2TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient ± 20 V ID25 TC = 25°C (Chip Capability) 340 A Maximum Ratings ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 850 A IA TC = 25°C 170 A EAS TC = 25°C 960 mJ PD TC = 25°C 935 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 75 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) = 75V = 340A Ω ≤ 3.2mΩ VGS = 10V, ID = 100A, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved D D (TAB) S TO-268 (IXFT) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) z Advantages z V 4.0 V ±200 nA 25 μA 1.5 mA 3.2 mΩ z z Easy to Mount Space Savings High Power Density Applications z z z DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100194(9/09) IXFH340N075T2 IXFT340N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 65 110 S 19 nF 2230 pF 490 pF 1.7 Ω 26 ns 50 ns 60 ns 35 ns 300 nC 68 nC 70 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 100A td(off) RG = 1Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 °C/W RthJC RthCH TO-247 (IXFH) Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 170A, VGS = 0V IRM QRM 75 -di/dt = 100A/μs VR = 37.5V 340 A 1360 A 1.3 V 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline ns 4.4 A 165 nC Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH340N075T2 IXFT340N075T2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 400 350 VGS = 15V 10V 9V 8V 300 7V 300 250 7V 200 ID - Amperes ID - Amperes VGS = 15V 10V 8V 350 6V 150 250 6V 200 150 5V 5V 100 100 50 50 4V 0 4V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.5 1.0 1.5 VDS - Volts Fig. 3. Output Characteristics 2.5 3.0 3.5 4.0 4.5 Fig. 4. RDS(on) Normalized to ID = 170A Value vs. Junction Temperature @ T J = 150ºC 350 2.4 VGS = 15V 10V 9V 8V VGS = 10V 2.2 2.0 7V 250 R DS(on) - Normalized 300 ID - Amperes 2.0 VDS - Volts 6V 200 150 5V 100 I D = 340A 1.8 1.6 I D = 170A 1.4 1.2 1.0 50 0.8 4V 0.6 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 2.0 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 170A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.4 180 2.2 160 External Lead Current Limit 140 TJ = 175ºC 120 1.8 1.6 ID - Amperes R DS(on) - Normalized 2.0 VGS = 10V 15V - - - - - 1.4 1.2 100 80 60 TJ = 25ºC 1.0 40 0.8 20 0.6 0 0 40 80 120 160 200 240 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH340N075T2 IXFT340N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 240 200 TJ = - 40ºC 180 200 160 g f s - Siemens ID - Amperes 140 120 100 80 TJ = 150ºC 25ºC - 40ºC 60 25ºC 160 150ºC 120 80 40 40 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 220 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 37.5V 9 250 I D = 170A 8 I G = 10mA VGS - Volts IS - Amperes 7 200 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 50 100 VSD - Volts Fig. 11. Capacitance 200 250 300 Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 RDS(on) Limit f = 1 MHz 25µs Ciss 10,000 Coss 1,000 External Lead Current Limit 100 100µs ID - Amperes Capacitance - PicoFarads 150 QG - NanoCoulombs 100ms 1ms DC 10 TJ = 175ºC Crss 10ms TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_340N075T2(V8)9-15-09 IXFH340N075T2 IXFT340N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 70 70 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V VDS = 37.5V 65 VDS = 37.5V 65 t r - Nanoseconds t r - Nanoseconds TJ = 125ºC 60 I D = 200A 55 50 I D = 100A 60 55 50 TJ = 25ºC 45 45 40 100 40 25 35 45 55 65 75 85 95 105 115 125 110 120 130 140 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 td(on) - - - - TJ = 125ºC , VGS = 10V 80 45 70 40 60 200 50 I D = 100A 150 40 7 8 9 10 11 12 13 14 75 25 15 35 45 55 RG - Ohms 65 TJ = 25ºC, 125ºC 28 60 24 55 150 115 50 125 160 170 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 190 tf 50 200 td(off) - - - - 360 320 VDS = 37.5V 350 280 300 240 250 200 I D = 200A 200 160 I D = 100A 150 120 100 80 50 40 0 0 1 2 3 4 5 6 7 8 9 RG - Ohms 10 11 12 13 14 15 t d(off) - Nanoseconds 70 140 105 TJ = 125ºC , VGS = 10V 400 75 36 130 95 400 450 80 t d(off) - Nanoseconds VDS = 37.5V 40 t f - Nanoseconds td(off) - - - - RG = 1Ω , VGS = 10V t f - Nanoseconds tf 44 120 85 500 85 110 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 48 20 100 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 32 70 I D = 100A, 200A 55 10 6 80 60 10 5 VDS = 37.5V 20 15 4 85 RG = 1Ω , VGS = 10V 65 20 0 td(off) - - - - 25 50 3 200 90 tf 30 30 2 190 35 100 1 180 t d(off) - Nanoseconds 250 t d(on) - Nanoseconds t r - Nanoseconds I D = 200A VDS = 37.5V 300 170 50 t f - Nanoseconds 350 160 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 400 tr 150 ID - Amperes IXFH340N075T2 IXFT340N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.00 Fig. 19. Maximum Transient Thermal Impedance afaf 0.20 Z (th)JC - ºC / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_340N075T2(V8)9-15-09