Advance Technical Information IXFH52N50P2 IXFT52N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 52A Ω ≤ 120mΩ TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 52 A IDM TC = 25°C, Pulse Width Limited by TJM 150 A IA TC = 25°C 52 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 960 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C z 300 260 °C °C 1.13 / 10 Nm/lb.in. 6 4 g g D Maximum Ratings TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 TO-268 (IXFT) G S D (Tab) G = Gate S = Source z z BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D (Tab) S High Power Density Easy to Mount Space Savings Applications z V 4.5 V ±100 nA 15 μA 1.5 mA z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 120 mΩ DS100256(03/10) IXFH52N50P2 IXFT52N50P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 30 Ciss Coss 48 S 6800 pF 695 pF 76 pF 22 ns 10 ns 46 ns 8 ns 113 nC 30 nC 43 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs TO-247 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.13 °C/W RthJC RthCS °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 52 A Repetitive, Pulse Width Limited by TJM 208 A IF = IS, VGS = 0V, Note 1 1.3 V 250 ns IF = 26A, -di/dt = 100A/μs VR = 85V, VGS = 0V 14 A 1.27 μC 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source 2 - Drain 4 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH52N50P2 IXFT52N50P2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 55 120 VGS = 10V 7V 50 VGS = 10V 8V 100 45 7V 80 35 ID - Amperes ID - Amperes 40 6V 30 25 20 60 6V 40 15 10 20 5V 5 5V 0 0 0 1 2 3 4 5 6 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 55 3.4 VGS = 10V 7V 50 VGS = 10V 3.0 ID - Amperes 40 R DS(on) - Normalized 45 6V 35 30 25 20 5V 15 2.6 I D = 52A 2.2 I D = 26A 1.8 1.4 1.0 10 0.6 5 4V 0 0.2 0 2 4 6 8 10 12 14 -50 16 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 55 3.4 VGS = 10V 50 3.0 45 TJ = 125ºC 40 2.6 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.2 1.8 1.4 35 30 25 20 15 TJ = 25ºC 10 1.0 5 0 0.6 0 10 20 30 40 50 60 70 80 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 90 100 110 120 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH52N50P2 IXFT52N50P2 Fig. 7. Input Admittance Fig. 8. Transconductance 90 100 80 90 80 70 TJ = 125ºC 25ºC - 40ºC 70 g f s - Siemens 60 ID - Amperes TJ = - 40ºC 50 40 30 25ºC 60 50 125ºC 40 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 VGS - Volts 50 60 70 80 90 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 10 9 VDS = 250V 8 I G = 10mA I D = 26A 100 7 VGS - Volts 80 IS - Amperes 40 ID - Amperes 60 6 5 4 TJ = 125ºC 40 3 TJ = 25ºC 2 20 1 0 Fig. 13. Maximum Transient Thermal Impedance 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.00 0 10 20 VSD - Volts 30 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 0.30 Ciss 10,000 0.10 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_52N50P2(8J-N45)03-22-10