Advance Technical Information IXFH60N20F IXFT60N20F HiPerRFTM Power MOSFET VDSS ID25 RDS(on) trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 60 A IDM TC = 25°C, pulse width limited by TJM 240 A IA TC = 25°C 60 A EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 320 W -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C z TJ TAB TO-268 G S TAB G = Gate S = Source z TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C z Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. z Weight TO-247 TO-268 6 4 g g z z D = Drain TAB = Drain International standard packages Avalanche Rated RF capable MOSFETs Double metal process for low gate resistnace Low package inductance Fast intrinsic diode Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved z z Easy to mount Space savings High power density V 5.0 V ± 100 nA 50 μA 1.5 mA 38 mΩ Applications: z z z z z Switched-mode and resonant-mode power supplies, >500kHz switching DC-DC Converters Laser Drivers 13.5 Mhz industrial applications Pulse generation DS98885A(11/08) IXFH60N20F IXFT60N20F Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 10V, ID = 0.5 • ID25, Note 1 TO-247 (IXFH) Outline 26 S 2930 pF 940 pF Crss 320 pF td(on) 15 ns 14 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr Resistive Switching Times td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 ns tf RG = 2Ω (External) 7.0 ns 100 nC 25 nC 46 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.39 °C/W RthJC RthCS °C/W (TO-247) 0.25 Source-Drain Diode TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 60 A ISM Repetitive, pulse width limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/μs 200 ns QRM IRM VR = 100V, VGS = 0V 0.8 μC 10 A ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2