Advance Technical Information IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 500V = 60A Ω ≤ 100mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA G D 60 A 150 A TC = 25°C 30 A EAS TC = 25°C 1 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns PD TC = 25°C 1040 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. z 4.0 5.5 6.0 g g g z TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247 & TO-3P) Weight TO-268 TO-3P TO-247 S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V Applications 5.0 V ±100 nA z 25 μA 2 mA z 100 mΩ z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100311(03/11) IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 35 Ciss 60 S 6250 pF 680 pF 5 pF 1.0 Ω 18 ns VGS = 0V, VDS = 25V, f = 1MHz Coss Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 tf RG = 1Ω (External) Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs TO-3P (IXFQ) Outline Qgd 16 ns 37 ns 8 ns 96 nC 28 nC 26 nC 0.12 °C/W RthJC RthCS (TO-247 & TO-3P) °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr Characteristic Values Min. Typ. Max. 60 A Repetitive, Pulse Width Limited by TJM 240 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 30A, -di/dt = 100A/μs IRM VR = 100V, VGS = 0V QRM Note 11 A 1.0 μC TO-247 Outline 1 2 ∅P 3 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline e Terminals: 1 - Gate 3 - Source Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 60 120 VGS = 10V 8V VGS = 10V 8V 50 100 7V 7V 80 ID - Amperes ID - Amperes 40 30 6V 20 60 40 6V 20 10 5V 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 60 3.4 VGS = 10V 7V VGS = 10V 3.0 R DS(on) - Normalized 50 6V 40 ID - Amperes 20 VDS - Volts VDS - Volts 30 20 I D = 60A 2.6 2.2 I D = 30A 1.8 1.4 1.0 5V 10 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 70 3.4 VGS = 10V TJ = 125ºC 3.0 60 50 2.6 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.2 1.8 1.4 40 30 20 TJ = 25ºC 1.0 10 0.6 0 0 10 20 30 40 50 60 70 80 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 90 100 110 120 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 120 100 90 TJ = - 40ºC 100 80 ID - Amperes 60 g f s - Siemens TJ = 125ºC 25ºC - 40ºC 70 50 40 25ºC 80 125ºC 60 40 30 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 VGS - Volts 60 70 80 90 100 110 90 100 Fig. 10. Gate Charge 180 10 160 9 VDS = 250V I D = 30A 8 140 I G = 10mA 7 VGS - Volts 120 IS - Amperes 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 80 60 6 5 4 3 TJ = 125ºC 40 2 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 10,000 Ciss RDS(on) Limit 100 1,000 Coss ID - Amperes Capacitance - PicoFarads 40 100 10 100µs 10 1 Crss TJ = 150ºC TC = 25ºC Single Pulse f = 1 MHz 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_60N50P3(W8)03-10-11