Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N90P IXFV12N90P IXFV12N90PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 12A Ω 900mΩ 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 12 A IDM TC = 25°C, pulse width limited by TJM 24 A IA TC = 25°C 6 A EAS TC = 25°C 500 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 380 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Weight TO-247 PLUS220 types 6 4 g g D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) TO-247 (IXFH) D (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved z z z Easy to mount Space savings High power density V 6.5 V ± 100 nA 25 μA 1 mA 900 mΩ Applications: z z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls DS100056(10/08) IXFH12N90P IXFV12N90P IXFV12N90PS Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 • ID25, Note 1 5.0 RGi Gate input resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 8.2 S 1.7 Ω 3080 pF 200 pF 33 pF 32 ns 34 ns 50 ns 68 ns 56 nC 18 nC 27 nC 0.33 °C/W RthJC RthCS PLUS220 (IXFV) Outline (TO-247, PLUS220) 0.25 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM TO-247 (IXFH) Outline 300 ns IF = 6A, -di/dt = 100A/μs VR = 100V, VGS = 0V 0.9 μC 7.8 A ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PLUS220SMD (IXFV_S) Outline e Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH12N90P IXFV12N90P IXFV12N90PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 12 24 VGS = 10V 8V 11 10 20 9 18 8 7V ID - Amperes ID - Amperes VGS = 10V 8V 22 7 6 5 4 16 14 12 8 6V 3 6 2 4 5V 1 7V 10 6V 2 0 5V 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 12 3.0 30 VGS = 10V 2.8 2.6 RDS(on) - Normalized 9 ID - Amperes 25 3.2 VGS = 10V 8V 10 8 7 7V 6 5 4 3 2.4 I D = 12A 2.2 2.0 I D = 6A 1.8 1.6 1.4 1.2 1.0 6V 2 0.8 1 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 26 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 13 2.8 12 VGS = 10V 2.6 TJ = 125ºC 11 2.4 10 2.2 9 ID - Amperes RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 11 15 VDS - Volts VDS - Volts 2.0 1.8 1.6 8 7 6 5 4 1.4 TJ = 25ºC 1.2 3 2 1.0 1 0.8 0 0 2 4 6 8 10 12 14 16 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 18 20 22 24 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH12N90P IXFV12N90P IXFV12N90PS Fig. 7. Input Admittance Fig. 8. Transconductance 14 14 TJ = - 40ºC 12 12 TJ = 125ºC 25ºC - 40ºC 25ºC 10 g f s - Siemens ID - Amperes 10 8 6 125ºC 8 6 4 4 2 2 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 2 4 VGS - Volts 6 8 10 12 14 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 35 VDS = 450V 14 30 I D = 6A I G = 10mA 12 VGS - Volts IS - Amperes 25 20 15 10 8 6 TJ = 125ºC 10 4 TJ = 25ºC 5 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 10 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 20 Coss 100 Crss f = 1 MHz 10 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_12N90P(65)10-22-08