Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N085 IXFX 180N085 VDSS ID25 RDS(on) Single MOSFET Die = 85 V = 180 A = 7 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM PLUS 247TM (IXFX) 85 85 V V Continuous Transient ±20 ±30 V V G ID25 ID(RMS) IDM IAR TC = 25°C (MOSFET chip capability) External lead current limit TC = 25°C, Note 1 TC = 25°C 180 76 720 180 A A A A TO-264 AA (IXFK) EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 560 W TJ -55 ... +150 °C Features TJM Tstg 150 -55 ... +150 °C °C 300 °C • • • • D (TAB) D G TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.9/6 PLUS 247 TO-264 Nm/lb.in. 6 10 g g D G = Gate S = Source (TAB) S D = Drain TAB = Drain International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 85 V VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 100 mA 2 mA 7 mW • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density 98637 (7/99) 1-2 IXFK 180N085 IXFX 180N085 Symbol Test Conditions gfs VDS = 10 V; ID = 60A Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 55 75 S 9100 pF 4000 pF 2000 pF 65 ns 90 ns 140 ns 55 ns 320 nC 65 nC 170 nC RthJC 0.22 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive; pulse width limited by TJM 720 A VSD IF = 100A, VGS = 0 V, Note 1 1.3 V 250 ns t rr QRM IF = 50A,-di/dt = 100 A/ms, VR = 50 V IRM Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.2 mC 10 A PLUS247TM (IXFX) Outline Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T © 2000 IXYS All rights reserved Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 2-2