IXYS IXFX32N80P

PolarHVTM HiPerFET
Power MOSFET
IXFK 32N80P
IXFX 32N80P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
800
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
800
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
32
A
IDM
TC = 25° C, pulse width limited by TJM
70
A
IAR
TC = 25° C
16
A
EAR
TC = 25° C
50
mJ
EAS
TC = 25° C
2.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
830
W
-55 ... +150
150
-55 ... +150
300
260
°C
°C
°C
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque (TO-264)
Weight
TO-264
PLUS247
TO-264 (IXFK)
G
S
(TAB)
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
10
6
g
g
D = Drain
Tab = Drain
Features
l
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
800
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
IDSS
V
5.0
V
VGS = ±30 VDC, VDS = 0
±200
nA
VDS = VDSS
VGS = 0 V
25
1000
µA
µA
TJ = 125° C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
D
1.13/10 Nm/lb.in.
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
RDS(on)
= 800 V
= 32 A
≤ 270 mΩ
Ω
≤ 250 ns
270
mΩ
l
l
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
DS99425E(01/06)
IXFK 32N80P
IXFX 32N80P
Symbol
Test Conditions
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
38
S
23
8800
pF
700
pF
Crss
26
pF
td(on)
30
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
24
ns
td(off)
RG = 2 Ω (External)
85
ns
24
ns
150
nC
40
nC
44
nC
tf
Qg(on)
Qgs
PLUS 247TM Outline
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
0.15 ° C/W
RthJC
° C/W
0.15
RthCS
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
32
A
ISM
Repetitive
70
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
250
ns
QRM
VR = 100V, VGS = 0 V
IRM
0.8
µC
6.0
A
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFK 32N80P
IXFX 32N80P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
35
70
VGS = 10V
VGS = 10V
30
25
50
6V
I D - Amperes
I D - Amperes
7V
60
7V
20
15
10
6V
40
5V
30
20
5
10
5V
0
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
Fig. 3. Output Characteristics
25
30
3.1
35
VGS = 10V
2.8
R D S ( o n ) - Normalized
7V
30
6V
25
I D - Amperes
20
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
@ 125ºC
20
15
10
5V
5
VGS = 10V
2.5
2.2
1.9
I D = 32A
1.6
I D = 16A
1.3
1.0
0.7
0.4
0
0
3
6
9
12
15
18
21
-50
24
-25
V D S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
2.8
35
2.6
VGS = 10V
TJ = 125º C
30
2.4
25
2.2
I D - Amperes
R D S ( o n ) - Normalized
15
V D S - Volts
V D S - Volts
2.0
1.8
1.6
1.4
20
15
10
1.2
5
TJ = 25º C
1.0
0
0.8
0
10
20
30
40
I D - Amperes
© 2006 IXYS All rights reserved
50
60
70
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFK 32N80P
IXFX 32N80P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
45
70
40
60
30
25
TJ = 125º C
25º C
20
-40º C
15
50
g f s - Siemens
I D - Amperes
35
40
30
TJ = -40º C
20
25º C
10
125º C
10
5
0
0
3
3.5
4
4.5
5
0
5
10
15
V G S - Volts
25
30
35
40
45
Fig. 10. Gate Charge
100
10
90
9
80
8
I D = 16A
7
I G = 10mA
70
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
60
50
40
20
I D - Amperes
TJ = 125º C
30
VDS = 400V
6
5
4
3
TJ = 25º C
20
2
10
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
V S D - Volts
20
40
60
80
100
120
140
160
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
100000
1.00
C iss
10000
R( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MHz
C oss
1000
0.10
100
C rs
10
0.01
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
Pulse Width - milliseconds
1000