IXYS IXGH24N120C3H1

Preliminary Technical Information
IXGH24N120C3H1
GenX3TM 1200V IGBT
VCES =
IC25 =
VCE(sat) ≤
tfi(typ) =
High speed PT IGBTs for
10-50kHz Switching
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
IC25
IC100
ICM
TC = 25°C
TC = 100°C
TC = 25°C, 1ms
IA
TC = 25°C
20
A
EAS
TC = 25°C
250
mJ
SSOA
(RBSOA)
VGE = 15V, TJ = 125°C, RG = 5Ω
Clamped inductive load @VCE ≤ 1200V
ICM = 48
A
PC
TC = 25°C
250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10
Nm/lb.in.
300
260
°C
°C
6
g
TJ
TJM
Tstg
Md
TL
TSOLD
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Weight
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
VGE(th)
IC
IC
ICES
VCE = VCES
VGE = 0V
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
TO-247AD
1200
1200
V
V
±20
±30
V
V
48
24
96
A
A
A
Characteristic Values
Min.
Typ.
Max.
= 250μA, VGE = 0V
= 250μA, VCE = VGE
1200
2.5
TJ = 125°C
= 20A, VGE = 15V, Note 2
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
3.6
3.1
1200V
48A
4.2V
110ns
G
C
TAB
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
International standard packages:
JEDEC TO-247AD
IGBT and anti-parallel FRD in one
package
MOS Gate turn-on
- drive simplicity
Sonic-FRD diode
- soft recovery with low IRM
Avalanche rated
Applications
5.0
V
V
100
1.5
μA
mA
±100
nA
4.2
V
V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
DS99942(01/08)
IXGH24N120C3H1
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
IC = 24A, VCE = 10V, Note 2
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
10
17
S
1900
125
52
pF
pF
pF
79
nC
12
nC
36
nC
16
27
1.16
93
110
ns
ns
mJ
ns
ns
Qg
Qge
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Inductive load, TJ = 25°°C
IC = 20A, VGE = 15V
VCE = 600V, RG = 5Ω
Note 1
Eoff
0.47
td(on)
tri
Eon
td(off)
tfi
Eoff
16
35
2.18
125
305
1.18
Inductive load, TJ = 125°°C
IC = 20A, VGE = 15V
VCE = 600V, RG = 5Ω
Note 1
RthJC
RthCK
TO-247 (IXGH) AD Outline
0.25
0.85
mJ
2.00
ns
ns
mJ
ns
ns
mJ
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
0.50 °C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VF
Characteristic Values
Min. Typ.
Max.
IF = 20A, VGE = 0V
3.0
2.8
TJ = 125°C
IRM
trr
IF = 20A, -diF/dt = 750A/μs, VR = 800V
VGE = 0V
19
70
A
ns
0.9 °C/W
RthJC
Notes:
V
V
1.
2.
Switching times may increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH24N120C3H1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
50
VGE = 15V
VGE = 15V
13V
11V
45
40
160
140
13V
9V
IC - Amperes
IC - Amperes
35
30
25
7V
20
120
11V
100
80
60
15
9V
40
10
20
5
7V
5V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5.5
2
4
6
8
Fig. 3. Output Characteristics
@ 125ºC
12
14
16
18
20
22
24
26
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
50
1.4
VGE = 15V
13V
11V
40
VGE = 15V
1.3
I
35
VCE(sat) - Normalized
45
IC - Amperes
10
VCE - Volts
VCE - Volts
9V
30
25
7V
20
15
C
= 48A
1.2
1.1
1.0
I
C
= 24A
I
C
= 12A
0.9
0.8
10
0.7
5V
5
0.6
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50
5.5
-25
0
VCE - Volts
25
50
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
100
125
150
Fig. 6. Input Admittance
60
8.0
55
TJ = 25ºC
7.5
TJ = - 40ºC
25ºC
125ºC
50
I
6.5
C
45
= 48A
24A
12A
IC - Amperes
7.0
VCE - Volts
75
TJ - Degrees Centigrade
6.0
5.5
5.0
40
35
30
25
20
4.5
15
4.0
10
3.5
5
3.0
0
5
6
7
8
9
10
11
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
7.0
7.5
8.0
8.5
9.0
IXGH24N120C3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
26
TJ = - 40ºC
24
I C = 24A
20
I G = 10 mA
12
25ºC
18
VGE - Volts
g f s - Siemens
VCE = 600V
14
22
16
125ºC
14
12
10
10
8
6
8
4
6
4
2
2
0
0
0
10
20
30
40
50
60
70
80
0
10
20
IC - Amperes
30
40
50
60
70
80
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
55
10,000
f = 1 MHz
50
40
Cies
1,000
IC - Amperes
Capacitance - PicoFarads
45
Coes
100
35
30
25
20
15
10
Cres
5
5
10
15
20
25
30
35
RG = 5Ω
dV / dt < 10V / ns
0
200
10
0
TJ = 125ºC
40
400
600
800
1000
1200
1400
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3H1(4N)01-15-08C
IXGH24N120C3H1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.4
2.6
1.8
1.3
2.4
1.6
I
4
6
8
10
12
14
16
18
1.6
1.0
1.4
TJ = 125ºC
1.0
1.2
0.4
0.8
1.0
0.2
0.8
0.0
1.4
0.5
1.2
0.6
0.8
0.6
TJ = 25ºC
11
12
13
2.8
360
2.4
340
0.4
0.8
t f - Nanoseconds
1.2
- MilliJoules
0.6
on
1.6
0.2
0.0
55
65
75
85
95
105
115
320
280
280
I
C
200
I
220
0.0
125
200
C
= 10A
160
120
80
4
6
8
10
12
14
16
18
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
130
340
125
350
140
105
VCE = 600V
140
100
100
95
t f - Nanoseconds
110
120
I
C
= 20A
200
110
I
150
C
= 10A
100
100
TJ = 25ºC
20
85
10
11
12
13
14
15
16
17
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
18
90
90
19
20
50
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
80
125
- Nanoseconds
td(off) - - - -
RG = 5Ω , VGE = 15V
VCE = 600V
250
d(off)
115
t d(off) - Nanoseconds
TJ = 125ºC
130
RG = 5Ω , VGE = 15V
120
260
td(off) - - - -
tf
t
300
60
20
RG - Ohms
300
t f - Nanoseconds
240
= 20A
260
0.4
380
180
360
300
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
tf
20
VCE = 600V
TJ - Degrees Centigrade
220
19
td(off) - - - -
tf
240
I C = 10A
45
18
400
320
2.0
0.8
35
17
t d(off) - Nanoseconds
VCE = 600V
25
16
TJ = 125ºC, VGE = 15V
I C = 20A
E
Eoff - MilliJoules
----
RG = 5Ω , VGE = 15V
1.0
15
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
1.4
Eon
14
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Eoff
0.6
0.4
10
20
RG - Ohms
1.2
1.8
VCE = 600V
1.2
1.6
I C = 10A
2.0
0.8
0.9
0.7
----
- MilliJoules
1.8
VCE = 600V
Eon
RG = 5Ω , VGE = 15V
on
2.0
---
Eoff
E
Eon -
- MilliJoules
1.0
TJ = 125ºC , VGE = 15V
on
Eoff
2.2
1.4
2.2
= 20A
E
1.1
C
Eoff - MilliJoules
1.2
Eoff - MilliJoules
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
IXGH24N120C3H1
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
60
td(on) - - - -
tr
50
TJ = 125ºC, VGE = 15V
I
C
22
= 20A
40
19
35
18
30
17
I
C
= 10A
25
16
20
15
15
14
10
34
13
6
8
10
12
14
16
18
17.0
RG = 5Ω , VGE = 15V
16.5
VCE = 600V
30
16.0
26
15.5
TJ = 125ºC, 25ºC
22
15.0
18
14.5
14
14.0
10
20
13.5
10
RG - Ohms
t d(on) - Nanoseconds
20
td(on) - - - -
tr
38
t d(on) - Nanoseconds
45
4
17.5
21
t r - Nanoseconds
55
VCE = 600V
t r - Nanoseconds
42
23
11
12
13
14
15
16
17
18
19
20
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
40
19
td(on) - - - -
tr
RG = 5Ω , VGE = 15V
35
18
30
I C = 20A
17
25
16
20
15
15
I
C
14
= 10A
10
25
35
45
55
65
75
85
t d(on) - Nanoseconds
t r - Nanoseconds
VCE = 600V
95
105
115
13
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3H1(4N)01-15-08-C