Advance Technical Information IXGH36N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 36A VCE(sat) ≤ 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 92 A IC110 TC = 110°C 36 A ICM TC = 25°C, 1ms 200 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 80 VCE ≤ VCES A PC TC = 25°C 250 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C 300 260 °C °C TJ TL TSOLD Md 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque 1.13/10 Nm/lb.in. 6 g Weight G z IC = 250μA, VGE= 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V 5.0 TJ = 125°C z z IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved 1.5 z z V z V z 25 μA μA ±100 nA 1.8 V Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Package High Power Density Low Gate Drive Requirement Applications z 250 C = Collector Tab = Collector Advantages z BVCES Tab Features z Characteristic Values Min. Typ. Max. E G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100236(02/10) IXGH36N60B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 28 IC = 30A, VCE = 10V, Note 1 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz 42 S 2280 pF 120 pF 32 pF Cres Qg Qge IC 80 nC 12 nC 36 nC 19 ns 24 ns 0.54 mJ = 30A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) Inductive Load, TJ = 25°°C IC = 30A, VGE = 15V VCE = 400V, RG = 5Ω TO-247 Outline (IXGH) 125 200 ns 100 160 ns Eoff 0.8 1.5 mJ td(on) 19 tfi tri 26 ns IC = 30A, VGE = 15V 0.9 mJ 180 ns VCE = 400V, RG = 5Ω 170 ns 1.5 mJ Inductive Load, TJ = 125°°C Eon td(off) tfi Eoff 0.50 °C/W RthJC RthCS Note ns 0.21 ∅P Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH36N60B3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 60 VGE = 15V 13V 11V 9V VGE = 15V 13V 11V 250 40 IC - Amperes IC - Amperes 50 7V 30 20 200 9V 150 7V 100 10 50 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 2 4 6 60 12 14 1.4 VGE = 15V 13V 11V 9V VGE = 15V 1.3 VCE(sat) - Normalized 50 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 40 7V 30 20 5V 10 I C = 60A I C = 30A I C = 15A 1.2 1.1 1.0 0.9 0.8 0 0.7 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 2.4 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 240 4.0 TJ = - 40ºC 25ºC 125ºC TJ = 25ºC 3.6 200 I 2.8 C IC - Amperes 3.2 VCE - Volts 8 VCE - Volts VCE - Volts = 60A 30A 15A 2.4 160 120 80 2.0 40 1.6 0 1.2 4 5 6 7 8 9 10 11 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 12 13 14 15 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGH36N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 TJ = - 40ºC 80 70 60 125ºC 50 I C = 30A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens VCE = 300V 14 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0 240 10 20 Fig. 9. Capacitance 40 50 60 70 80 Fig. 10. Reverse-Bias Safe Operating Area 10,000 90 f = 1 MHz 80 70 Cies 1,000 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs IC - Amperes Coes 100 60 50 40 30 Cres 10 0 5 10 15 20 25 30 35 20 TJ = 125ºC 10 RG = 5Ω dv / dt < 10V / ns 0 100 40 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGH36N60B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.5 3.6 4.0 4.0 3.2 3.6 Eoff 3.2 RG = 5Ω , VGE = 15V C 2.8 = 60A 2.4 --- 2.0 VCE = 400V 2.0 - MilliJoules TJ = 125ºC , VGE = 15V 2.5 1.6 I C = 30A 2.0 Eon ---- 1.6 TJ = 125ºC VCE = 400V 2.8 1.4 2.4 1.2 2.0 1.0 1.6 0.8 TJ = 25ºC 1.5 1.2 1.2 0.6 1.0 0.8 0.8 0.4 0.5 0.4 0.4 0.2 0.0 120 0.0 I C = 15A 0.0 0 10 20 30 40 50 60 70 80 90 100 110 0.0 15 20 25 30 45 50 55 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 320 3.6 1.8 300 tf 280 TJ = 125ºC, VGE = 15V 1.6 = 60A 1.4 2.4 1.2 Eoff Eon ---- RG = 5Ω , VGE = 15V 1.0 I C = 30A VCE = 400V 0.8 Eon - MilliJoules 2.8 t f - Nanoseconds C 60 1100 td(off) - - - - 1000 900 VCE = 400V 260 800 240 700 220 I C = 15A, 30A, 60V 600 200 500 1.2 0.6 180 400 0.8 0.4 160 300 0.4 0.2 140 200 0.0 125 120 I C = 15A 0.0 25 35 45 55 65 75 85 95 105 115 0 10 20 30 40 TJ - Degrees Centigrade 240 td(off) - - - - tf 225 160 140 TJ = 25ºC t f - Nanoseconds 180 150 120 90 100 25 30 35 40 110 td(off) - - - - 100 120 45 50 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 55 60 190 RG = 5Ω , VGE = 15V 180 VCE = 400V 195 170 180 160 165 I C 150 = 30A, 60A 150 140 135 130 I C = 15A 120 110 20 100 120 105 110 90 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 100 125 t d(off) - Nanoseconds TJ = 125ºC t d(off) - Nanoseconds 200 15 90 200 210 VCE = 400V 190 130 80 240 220 RG = 5Ω , VGE = 15V 170 70 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 230 210 60 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 50 t d(off) - Nanoseconds I 1.6 40 IC - Amperes 4.0 2.0 35 RG - Ohms 3.2 t f - Nanoseconds 1.8 Eon - MilliJoules Eon - Eoff on 3.0 Eoff - MilliJoules I E Eoff - MilliJoules 3.5 Eoff - MilliJoules Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXGH36N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 150 120 100 55 tr 50 RG = 5Ω , VGE = 15V 90 105 80 90 70 I 75 C = 15A, 30A, 60A 60 25 24 td(on) - - - - 23 VCE = 400V 45 22 TJ = 125ºC 40 21 35 20 30 19 60 50 45 40 30 30 20 17 15 20 15 16 10 120 10 0 0 10 20 30 40 50 60 70 80 90 100 110 25 15 15 RG - Ohms 18 TJ = 25ºC t d(on) - Nanoseconds VCE = 400V t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 60 t r - Nanoseconds tr 135 110 20 25 30 35 40 45 50 55 60 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 65 27 tr I C = 60A 45 td(on) - - - - 25 RG = 5Ω , VGE = 15V 23 VCE = 400V 35 21 I C = 30A 25 I 15 C 19 = 15A 17 5 25 35 45 55 t d(on) - Nanoseconds t r - Nanoseconds 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_36N60B3(55) 1-29-10-D