IXYS IXGP20N120

IGBT
IXGA 20N120 VCES
IXGP 20N120 IC25
VCE(sat)
tfi(typ)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
40
A
IC90
TC = 90°C
20
A
ICM
TC = 25°C, 1 ms
80
A
ICM = 40
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 47 Ω
(RBSOA)
Clamped inductive load
PC
TC = 25°C
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
°C
260
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
Weight
TO-220
TO-263
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4
2
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC = 1 mA, VGE = 0 V
1200
VGE(th)
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IC = IC90, VGE = 15 V
© 2002 IXYS All rights reserved
TO-263 AA (IXGA)
V
2.5
5.0
V
TJ = 25°C
250
µA
TJ = 125°C
1
mA
±100
nA
2.5
V
2.0
C (TAB)
E
150
Tstg
VCE(sat)
G C
E
G
TJM
VCE = 0 V, VGE = ±20 V
TO-220AB (IXGP)
@ 0.8 VCES
TJ
IGES
= 1200 V
= 40 A
= 2.5 V
= 380 ns
Features
• International
standard packages
JEDEC TO-220AB and TO-263AA
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
•
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
Advantages
•
•
•
Easy to mount with one screw
Reduces assembly time and cost
High power density
98752A (06/02)
IXGA 20N120
IXGP 20N120
TO-220 AB Dimensions
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min. Typ. Max.
IC = IC90; VCE = 10 V,
12
16
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
1750
pF
90
pF
31
pF
90
A
63
nC
13
nC
26
nC
28
ns
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
IC(ON)
VGE = 10V, VCE = 10V
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
= IC90, VGE = 15 V
20
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
IC
= IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
800
ns
380
700
ns
6.5
10.5
mJ
30
ns
27
ns
0.90
mJ
700
ns
550
ns
9.5
mJ
RthJC
RthCK
0.83
TO-220
2 - Collector
4 - Collector
Bottom Side
ns
400
Inductive load, TJ = 125°°C
Pins: 1 - Gate
3 - Emitter
0.5
K/W
TO-263 AA Outline
K/W
1.
2.
3.
4.
Min. Recommended Footprint
(Dimensions in inches and mm)
Gate
Collector
Emitter
Collector
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1