Preliminary Technical Information High-Gain IGBTs IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 VCES = 600V IC110 = 36A VCE(sat) ≤ 1.80V Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 100 36 230 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load ICM = 72 VCE ≤ VCES A PC TC = 25°C 290 W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Emitter 300 260 °C °C Features 10..65 / 2.2..14.6 1.13 / 10 N/lb. Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G CE C (Tab) TO-247 (IXGH) G z z z C C (Tab) E D = Collector Tab = Collector Optimized for Low Conduction and Switching Losses International Standard Packages Square RBSOA Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 125°C z 6.5 V 25 μA 1 mA 1.43 1.40 ±100 nA 1.80 V V Applications z z z z z z z © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings V TJ = 125°C IGES z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Lamp Ballasts DS100319A(04/11) IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Notes: Characteristic Values Min. Typ. Max. IC = IC110, VCE = 10V, Note 1 20 VCE = 25V, VGE = 0V, f = 1MHz IC = IC110, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 36A, VGE = 15V VCE = 400V, RG = 10Ω Note 2 Inductive Load, TJ = 125°C IC = 36A, VGE = 15V VCE = 400V, RG = 10Ω Note 2 TO-247 TO-220 TO-263 Outline 30 S 1860 105 60 pF pF pF 110 nC 13 nC 43 nC 37 68 0.93 330 80 1.00 ns ns mJ ns ns mJ 1.80 31 45 0.94 280 220 1.90 ns ns mJ ns ns mJ 0.21 0.50 0.43 °C/W °C/W °C/W 1 = Gate 2 = Collector 3 = Emitter 4 = Collector TO-220 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Dim. TO-247 Outline 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter 2 - Collector Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1 = Gate 2 = Collector Pins: 1 - Gate 3 = Emitter 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 72 VGE = 15V 13V 11V 10V 64 VGE = 15V 300 14V 13V 250 8V 48 12V IC - Amperes IC - Amperes 56 9V 40 32 7V 24 200 11V 150 10V 9V 100 16 8V 50 8 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 7V 6V 0 2.2 2.4 0 5 10 20 25 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 1.4 72 VGE = 15V 13V 11V 10V 56 VGE = 15V 1.3 VCE(sat) - Normalized 64 IC - Amperes 15 9V 48 40 8V 32 24 7V 1.2 I C = 72A I C = 36A I C = 18A 1.1 1.0 0.9 16 6V 0.8 8 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0.7 -50 2.4 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 4.5 120 TJ = 25ºC 4.0 TJ = - 40ºC 25ºC 125ºC 100 3.0 I C IC - Amperes VCE - Volts 3.5 = 72A 2.5 80 60 40 2.0 36A 20 1.5 18A 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Fig. 8. Gate Charge Fig. 7. Transconductance 50 16 45 VCE = 300V 14 TJ = - 40ºC I C = 36A 40 30 VGE - Volts g f s - Siemens 12 25ºC 35 125ºC 25 I G = 10mA 20 10 8 6 15 4 10 2 5 0 0 0 20 40 60 80 100 0 120 20 40 60 80 100 120 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 120 10,000 f = 1 MHz Cies 1,000 80 IC - Amperes Capacitance - PicoFarads 100 Coes 60 40 100 TJ = 125ºC Cres 20 10 0 5 10 15 20 25 30 35 40 0 100 RG = 10Ω dv / dt < 10V / ns 150 200 250 VCE - Volts 300 350 400 450 500 550 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 6.5 Eon - --- 3.6 TJ = 125ºC , VGE = 15V 5.5 I C = 72A 2 3.5 1.6 I C 1.2 = 36A 2.5 0.8 2.0 0.4 1.5 15 20 25 30 ---- 3.5 VCE = 400V 3 3 2.5 2.5 TJ = 125ºC, 25ºC 2 1.5 1 0.5 0.5 0 0 15 35 20 25 30 35 2.0 I C = 72A 2.0 1.5 1.5 I C = 36A 0.0 45 55 65 75 tfi 85 95 105 115 220 500 I C = 72A 200 400 I 160 200 320 390 280 360 100 15 20 250 330 300 TJ = 125ºC 150 270 100 240 TJ = 25ºC 0 30 35 40 45 50 25 30 35 55 60 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 65 70 75 400 tfi td(on) - - - - 370 RG = 10Ω , VGE = 15V VCE = 400V 240 340 200 310 I C = 36A 160 280 I C = 72A 120 250 210 80 220 180 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 190 125 t d(off) - Nanoseconds TJ = 25ºC 25 = 36A 300 420 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 400V 20 C 180 10 t f i - Nanoseconds tfi 15 600 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 10Ω , VGE = 15V 50 700 RG - Ohms 400 200 td(off) - - - - 140 0.5 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 300 75 VCE = 400V 240 TJ - Degrees Centigrade 350 70 1.0 0.5 35 65 t d(off) - Nanoseconds 3.0 t f i - Nanoseconds VCE = 400V 3.5 25 60 TJ = 125ºC, VGE = 15V 2.5 1.0 55 800 260 Eon - MilliJoules Eoff - MilliJoules ---- RG = 10Ω , VGE = 15V 2.5 50 280 3.0 4.0 45 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 5.0 4.5 40 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 2 1.5 RG - Ohms Eoff 4 1 0 10 Eon Eon - MilliJoules 4.0 Eon - MilliJoules 2.4 3.0 3.5 2.8 4.5 Eoff RG = 10Ω , VGE = 15V 3.2 VCE = 400V 5.0 4.5 4 Eoff - MilliJoules Eoff 6.0 Eoff - MilliJoules 4.5 4 IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 td(on) - - - - TJ = 125ºC, VGE = 15V C 100 48 = 72A 80 42 60 36 40 I C = 36A 20 10 td(on) - - - - 50 RG = 10Ω , VGE = 15V 15 20 25 30 45 TJ = 25ºC 80 60 35 40 30 20 24 0 30 TJ = 125ºC 25 20 15 35 40 t d(on) - Nanoseconds I 54 t d(on) - Nanoseconds 100 120 55 tri VCE = 400V VCE = 400V 120 60 t r i - Nanoseconds tri 140 t r i - Nanoseconds 140 66 25 35 45 55 65 75 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 55 tri td(on) - - - - RG = 10Ω , VGE = 15V 120 50 100 45 80 I C = 72A 60 40 35 40 I C = 36A 20 25 35 45 55 65 75 85 95 105 115 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 400V 30 25 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_50N60B4(L5)03-23-11