IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE(sat) tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Limited by leads) 75 A IC110 TC = 110°C 30 A IF110 TC = 110°C 13 A ICM TC = 25°C, 1ms 260 A IA EAS TC = 25°C TC = 25°C 40 400 A mJ SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 125 A (RBSOA) Clamped Inductive Load PC TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 20..120/4.5..27 N/lb VISOL 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 10 s FC Mounting Force TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C 5 g Weight E Isolated Tab C = Collector Features z z 170 C G = Gate E = Emitter z @ VCE ≤ VCES TJ G z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode High Speed Silicon Carbide Schottky Co-Pack Diode - No Reverse Recovery 2500V Electrical Isolation Avalanche Rated Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V z Characteristic Values Min. Typ. Max. 3.0 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved 2.2 1.7 z 5.5 V 50 1 μA mA ±100 nA 2.5 V V z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100098B(01/10) IXGR60N60C3C1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 23 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 38 S 2810 210 80 pF pF pF 115 43 22 nC nC nC 24 ns 40 0.83 ns mJ Qg Qge Qgc td(on) IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C tri Eon IC = 40A, VGE = 15V td(off) VCE = 480V, RG = 3Ω 70 tfi Note 2 50 Eoff td(on) tri Eon td(off) tfi Eoff ISOPLUS247 (IXGR) Outline 0.45 Inductive Load, TJ = 125°C IC = 40A, VGE = 15V VCE = 480V, RG = 3Ω Note 2 RthJC RthCS 110 ns ns 0.80 mJ 23 39 0.78 112 86 0.80 ns ns mJ ns ns mJ 0.15 0.73 °C/W °C/W Reverse Diode (SiC) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 20A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 1.65 1.80 TJ = 125°C RthJC Notes: 2.10 V V 1.75 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR60N60C3C1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 80 VGE = 15V 13V 11V 70 250 60 11V 9V IC - Amperes IC - Amperes VGE = 15V 13V 50 40 30 7V 200 150 9V 100 20 7V 50 10 5V 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 2 4 6 12 14 16 1.2 80 VGE = 15V 13V 11V 70 VGE = 15V 1.1 I 60 9V VCE(sat) - Normalized IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 40 7V 30 20 10 C = 80A 1.0 0.9 I C = 40A 0.8 0.7 I 0.6 5V 0 C = 20A 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 6.0 TJ = 25ºC 5.5 140 5.0 120 I 4.5 C = 80A 40A 20A IC - Amperes VCE - Volts 8 VCE - Volts VCE - Volts 4.0 3.5 100 60 3.0 40 2.5 20 2.0 TJ = 125ºC 25ºC - 40ºC 80 0 6 7 8 9 10 11 12 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXGR60N60C3C1 Fig. 7. Transconductance Fig. 8. Gate Charge 70 16 TJ = - 40ºC VGE - Volts 125ºC 40 I C = 40A I G = 10 mA 12 25ºC 50 g f s - Siemens VCE = 300V 14 60 30 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 120 140 160 0 10 20 30 IC - Amperes 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 140 10,000 Capacitance - PicoFarads 120 Cies 100 IC - Amperes 1,000 Coes 100 80 60 40 TJ = 125ºC 20 RG = 3Ω dv / dt < 10V / ns Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 0 100 150 200 250 300 VCE - Volts 350 400 450 500 550 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGR60N60C3C1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4.5 Eoff Eon - 3.5 VCE = 480V ---- C 2.5 = 80A 2.0 2.0 1.5 1.5 1.0 1.0 I C = 40A 0.5 7 8 2.0 TJ = 125ºC, 25ºC 1.5 1.0 1.0 0.5 0.5 9 10 11 12 13 14 0.0 20 15 25 30 35 40 4.0 3.5 2.5 I C = 80A 2.0 2.0 1.5 1.5 1.0 140 t f - Nanoseconds 2.5 0.5 0.0 75 85 95 105 115 240 VCE = 480V 220 120 180 110 I C 160 = 80A 100 140 I 90 0.0 125 C = 40A 100 70 80 60 60 3 4 5 6 7 8 200 120 80 100 60 80 TJ = 25ºC 40 0 20 45 50 13 14 15 td(off) - - - - 135 RG = 3Ω , VGE = 15V VCE = 480V 120 120 100 105 I C = 80A 80 90 I C = 40A 60 75 40 60 60 20 40 t f - Nanoseconds t f - Nanoseconds TJ = 125ºC 35 12 55 60 65 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 70 75 80 20 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 45 125 t d(off) - Nanoseconds 140 30 tf 140 t d(off) - Nanoseconds VCE = 480V 25 11 150 160 120 20 10 160 180 RG = 3Ω , VGE = 15V 40 9 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) - - - - 100 120 80 RG - Ohms 180 140 260 TJ = 125ºC, VGE = 15V Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 80 td(off) - - - - TJ - Degrees Centigrade tf 75 200 0.5 I C = 40A 65 70 130 1.0 55 65 t d(off) - Nanoseconds 3.0 45 tf 150 VCE = 480V 35 60 280 160 Eon - MilliJoules E off - MilliJoules ---- RG = 3Ω , VGE = 15V 25 55 170 4.0 3.0 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.5 45 IC - Amperes RG - Ohms Eon 1.5 0.0 0.0 6 2.0 0.5 0.0 Eoff 2.5 E on - MilliJoules I E on - MilliJoules 2.5 5 Eon RG = 3Ω , VGE = 15V VCE = 480V 3.0 4 Eoff 2.5 3.5 3.0 3 3.0 4.0 --- TJ = 125ºC , VGE = 15V E off - MilliJoules 4.0 E off - MilliJoules 3.0 4.5 IXGR60N60C3C1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 140 td(on) - - - - I C = 80A 80 35 I 60 C = 40A 20 3 4 5 6 7 8 9 10 11 12 13 14 VCE = 480V 100 28 TJ = 25ºC, 125ºC 80 40 22 25 20 20 20 0 18 20 15 25 30 35 40 140 65 70 75 80 28 I C = 80A 26 60 24 30 TJ = 125ºC 25 20 15 = 40A 40 TJ = 25ºC 35 IF - Amperes 100 40 t d(on) - Nanoseconds t r - Nanoseconds 60 45 30 VCE = 480V C 55 Fig. 21. Forward Current vs. Forward Voltage td(on) - - - - RG = 3Ω , VGE = 15V I 50 50 32 80 45 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tr 26 24 RG - Ohms 120 30 60 30 40 td(on) - - - - t d(on) - Nanoseconds 40 tr RG = 3Ω , VGE = 15V t d(on) - Nanoseconds VCE = 480V 100 32 120 45 TJ = 125ºC, VGE = 15V t r - Nanoseconds tr 120 t r - Nanoseconds 140 50 10 22 5 20 25 35 45 55 65 75 85 95 105 115 20 125 0 0.0 0.5 1.0 TJ - Degrees Centigrade 1.5 2.0 2.5 3.0 VF - Volts Fig. 22. Maximum Transient Thermal Impedance for Diodes Z(th)JC - ºC / W 10.0 1.0 0.1 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_60N60C3C1(6D)01-15-10-A