Advance Technical Information HiPerFASTTM IGBT IXGH15N120B2D1 IXGT15N120B2D1 Optimized for 10-20 KHz hard switching and up to 100 KHz resonant switching VCES IC25 VCE(sat) =1200 V = 30 A = 3.3 V = 137 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C 15 A ICM TC = 25°C, 1 ms 60 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 40 A (RBSOA) Clamped inductive load PC TC = 25°C TO-247AD (IXGH) G C TAB E TO-268 (IXGT) G E @ 0.8 VCES TJ 192 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G = Gate E = Emitter C (TAB) C = Collector TAB = Collector Features Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. z °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 Maximum tab temperature soldering SMD devices for 10s 260 °C z 6/4 g z Weight z TO-247AD / TO-268 International standard packages: JEDEC TO-247AD & TO-268 IGBT and anti-parallel FRED in one package MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) z Min. Characteristic Values Typ. Max. V z V z z z BVCES IC = 250 μA, VGE = 0 V 1200 VGE(th) IC = 250 μA, VCE = VGE 2.5 ICES VCE = VCES TJ = 25°C 100 μA VGE = 0 V TJ = 125°C 3.5 mA ±100 nA 3.3 V V 5.0 Advantages z IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = ICE90, VGE = 15 z TJ = 125°C © 2005 IXYS All rights reserved 2.7 AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS99492(09/05) IXGH 15N120B2D1 IXGT 15N120B2D1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = IC90; VCE = 10 V, 12 15 TO-247 AD Outline S Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % 1700 pF 95 pF Cres 38 pF Qg 86 nC 13 nC 26 nC Inductive load, TJ = 25°°C 25 ns = IC90, VGE = 15 V 15 ns Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) IC VCE = 960 V, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 165 240 ns 137 255 ns 1.4 2.3 mJ 25 Inductive load, TJ = 125°°C ns 18 ns mJ 260 ns 305 ns Eoff VCE = 960 V, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 0.60 2.8 mJ RthJC RthCK TO-247 0.25 tri Eon td(off) tfi IC = IC90, VGE = 15 V Reverse Diode (FRED) 0.65 K/W K/W TO-268 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IF TC = 100°C VF IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V, TJ = 125°C IRM trr 1 = Gate 2 = Collector 3 = Emitter Tab = Collector IF = 25 A; -diF/dt = 100 A/μs, VR = 100 V VGE = 0 V; TJ = 100°C 15 A 2.8 2.1 V V 6 165 A ns 1.6 K/W RthJC Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344