IXGH30N120B3D1 IXGT30N120B3D1 GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VCES IC110 VCE(sat) tfi(typ) = = ≤£ = 1200V 30A 3.5V 204ns TO-247 AD (IXGH) VGES Continuous ±20 V VGEM Transient ±30 V IC110 TC = 110°C 30 A IF110 TC = 110°C 28 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 A (RBSOA) Clamped inductive load PC TC = 25°C G C C (TAB) E TO-268 (IXGT) @ 0.8 • VCE 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (TO-247) 1.13 / 10 Nm/lb.in. TL Maximum lead temperature for soldering 300 °C TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C Weight TO-247 TO-268 6 4 g g G G = Gate E = Emitter E C (TAB) C = Collector TAB = Collector Features z z z z Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages Symbol Test Conditions VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 2.96 2.95 5.0 V 300 1.5 μA mA ±100 nA 3.5 V V z z High power density Low gate drive requirement Applications z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines DS99566A(05/08) IXGH30N120B3D1 IXGT30N120B3D1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Min. IC = 30A, VCE = 10V, Note 1 Characteristic Values Typ. Max. 11 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon Inductive load, TJ = 25°°C IC = 30A, VGE = 15V, Notes 2 19 S 1750 120 46 pF pF pF 87 15 39 nC nC nC 16 ns 37 3.47 ns mJ 127 200 ns 204 380 ns Eoff 2.16 4.0 mJ td(on) tri Eon td(off) tfi Eoff 18 38 6.70 216 255 5.10 ns ns mJ ns ns mJ 0.21 0.42 °C/W °C/W td(off) tfi VCE = 0.8 • VCES, RG = 5Ω Inductive load, TJ = 125°°C IC = 30A,VGE = 15V, Notes 2 VCE = 0.8 • VCES,RG = 5Ω RthJC RthCS Reverse Diode (FRED) Symbol TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Test Conditions VF IF = 30A,VGE = 0V, Note 1 IRM IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C trr VR = 300V TJ = 150°C TJ = 100°C 2.8 V V 4 A 1.6 100 RthJC ns 0.9 °C/W Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH30N120B3D1 IXGT30N120B3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 60 VGE = 15V 13V 11V 55 50 VGE = 15V 180 160 13V 140 40 IC - Amperes IC - Amperes 45 9V 35 30 25 20 7V 120 11V 100 80 9V 60 15 40 10 7V 20 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 3 6 9 15 60 21 24 27 30 1.5 VGE = 15V 13V 11V 55 50 VGE = 15V 1.4 1.3 VCE(sat) - Normalized 45 40 35 9V 30 25 20 7V 15 1.1 C = 60A I C = 30A I C = 15A 1.0 0.9 0.8 0.7 5 I 1.2 10 5V 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 5.0 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 65 7.5 7.0 60 TJ = 25ºC 55 6.5 50 6.0 45 IC - Amperes VCE - Volts 18 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC IC - Amperes 12 VCE - Volts VCE - Volts 5.5 I 5.0 C = 60A 4.5 4.0 30A 40 35 30 TJ = 125ºC 25ºC - 40ºC 25 20 3.5 15 3.0 10 15A 2.5 5 2.0 0 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 IXGH30N120B3D1 IXGT30N120B3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 26 16 TJ = - 40ºC 24 20 25ºC 12 125ºC 10 I C = 30A I G = 10mA 18 16 VGE - Volts g f s - Siemens VCE = 600V 14 22 14 12 10 8 6 8 4 6 4 2 2 0 0 0 10 20 30 40 50 60 0 70 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 70 f = 1 MHz 50 Cies 1,000 IC - Amperes Capacitance - PicoFarads 60 Coes 100 40 30 20 10 Cres 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 5Ω dV / dt < 10V / ns 0 200 400 600 VCE - Volts 800 1000 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N120B3(4A)5-06-08-A IXGH30N120B3D1 IXGT30N120B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 18 16 20 Eon - Eoff 16 --- 16 18 14 Eoff 16 12 VCE = 960V I C = 30A 4 2 5 7 9 11 13 15 17 19 21 23 Eoff - MilliJoules 8 6 6 8 4 4 6 2 4 0 10 6 TJ = 25ºC 20 25 30 12 I C = 60A on 10 6 8 4 6 I C = 30A 2 4 0 2 125 45 55 65 75 85 95 105 115 - MilliJoules 8 35 tf 420 TJ = 125ºC, VGE = 15V 550 400 VCE = 960V 500 380 450 360 I 350 320 300 300 I 200 260 150 100 7 9 11 200 TJ = 25ºC 150 150 100 100 50 35 40 45 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 50 55 60 t f - Nanoseconds t f - Nanoseconds 250 30 13 15 17 19 21 23 25 280 400 tf 375 RG = 5Ω , VGE = 15V 265 250 350 VCE = 960V 235 td(off) - - - - 325 220 300 I C 205 = 60A, 30A 275 190 250 175 225 160 200 145 175 130 150 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 115 125 t d(off) - Nanoseconds 250 t d(off) - Nanoseconds 300 TJ = 125ºC 25 250 = 30A 425 350 VCE = 960V 20 C 280 5 RG = 5Ω , VGE = 15V 15 400 = 60A Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) - - - - 200 C 340 240 400 300 600 td(off) - - - - RG - Ohms 450 350 60 440 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 55 650 TJ - Degrees Centigrade 400 50 t d(off) - Nanoseconds VCE = 960V t f - Nanoseconds 14 E Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 25 45 460 16 10 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 14 Eon 35 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 2 0 15 25 RG - Ohms 12 10 TJ = 125ºC 8 12 8 10 - MilliJoules = 60A 12 on C - MilliJoules I 10 14 E 14 on 12 E Eoff - MilliJoules VCE = 960V ---- RG = 5Ω , VGE = 15V TJ = 125ºC , VGE = 15V 14 Eon IXGH30N120B3D1 IXGT30N120B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 46 C 42 = 60A 38 100 34 80 I C 20 0 5 7 9 11 13 15 17 19 21 23 22 20 18 40 16 30 14 20 12 18 10 10 14 0 22 = 30A 24 TJ = 125ºC, 25ºC 70 50 26 40 26 VCE = 960V 80 60 30 60 t d(on) - Nanoseconds 120 28 25 8 15 RG - Ohms t d(on) - Nanoseconds I VCE = 960V td(on) - - - - RG = 5Ω , VGE = 15V 90 TJ = 125ºC, VGE = 15V 140 30 tr 100 t r - Nanoseconds tr 160 t r - Nanoseconds 110 50 20 25 30 35 40 45 50 55 60 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 26 120 tr td(on) - - - - 110 RG = 5Ω , VGE = 15V 100 VCE = 960V 25 24 23 I C = 60A 90 22 80 21 70 20 60 19 50 18 40 17 30 I C t d(on) - Nanoseconds t r - Nanoseconds 130 16 = 30A 20 15 10 25 35 45 55 65 75 85 95 105 115 14 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_30N120B3(4A)5-06-08-A IXGH30N120B3D1 IXGT30N120B3D1 1000 60 A 50 IF 30 TVJ= 100°C 800 Qr TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 40 600 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A nC V = 300V R 0 1 0 100 3 V 2 5 A/μs 1000 -diF /dt VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr versus -diF/dt 2.0 90 Kf IF= 60A IF= 30A IF= 15A IRM 400 600 A/μs 800 -diF /dt 1000 1.00 TVJ= 100°C IF = 30A μs VFR tfr 80 1.0 200 Fig. 23. Peak reverse current IRM versus -diF/dt V V FR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 tfr 0.75 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 °C 160 60 0 200 400 600 T VJ 800 A/μs 1000 -diF /dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 1 K/W 1 ZthJC - K/W 0.1 Z thJC 0.1 0.01 0.01 0.001 0.00001 0.001 0.0001 DSEP 29-06 0.0001 0.001 0.01 0.001 0.01 Time - Seconds Fig. 27. Transient thermal resistance junction to case © 2008 IXYS CORPORATION, All rights reserved 0.1 0.1 t s 1 1 0 0 200 400 0.00 600 A/μs 800 1000 diF /dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt