Advance Technical Information IXGK120N120B3 IXGX120N120B3 GenX3TM 1200V IGBTs VCES = 1200V IC90 = 120A VCE(sat) ≤ 3.0V High Speed Low Vsat PT IGBTs for 3-20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC90 ILRMS ICM TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = 25°C, 1ms 200 120 120 370 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load ICM = 240 VCES < 1200 A V PC TC = 25°C 830 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G G BVCES IC = 250μA, VCE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC 1200 5.0 TJ = 125°C = 100A, VGE = 15V, Note 1 2.4 z z z (TAB) E = Emitter TAB = Collector Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages V z z z ±400 nA z V z z z z © 2009 IXYS CORPORATION, All Rights Reserved E Features 50 μA 5 mA 3.0 (TAB) High Power Density Low Gate Drive Requirement Applications V 3.0 C G = Gate C = Collector z Characteristic Values Min. Typ. Max. E E PLUS 247TM (IXGX) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100152(05/09) IXGK120N120B3 IXGX120N120B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 40 Cies Coes TO-264 (IXGK) Outline 70 S 9700 pF 670 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 255 pF Qg(on) 470 nC Qge IC = IC90, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri 67 nC 190 nC 36 ns Inductive load, TJ = 25°C 88 ns 5.5 mJ VCE = 600V, RG = 2Ω 275 ns Note 2 145 ns Eoff 5.8 mJ td(on) 34 ns Eon IC td(off) tfi = 100A, VGE = 15V Inductive load, TJ = 125°C 88 ns Eon IC = 100A, VGE = 15V 6.1 mJ td(off) VCE = 600V, RG = 2Ω 315 ns Note 2 570 ns 10.3 mJ tri tfi Eoff 0.15 °C/W RthJC RthCK 0.15 °C/W PLUS 247TM (IXGX) Outline Note 1. Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES, Higher TJ or Increased RG. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) ADVANCE TECHNICAL INFORMATION Dim. The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2