Advance Technical Information XPTTM 600V GenX3TM IXXH50N60C3 VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 100 50 200 A A A IA EAS TC = 25°C TC = 25°C 25 200 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load ICM = 100 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 22Ω, Non Repetitive 10 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque 600 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g Weight Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE= 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE= 0V z z z z IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 150°C © 2010 IXYS CORPORATION, All Rights Reserved 1.95 2.45 Optimized for 20-60kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Package Advantages z z z z z V 25 μA 2 mA TJ = 150°C C = Collector Tab = Collector High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Easy to Parallel Applications V 5.5 Tab E Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified C G = Gate E = Emitter z TJ TJM Tstg TL TSOLD G ±100 nA 2.30 V V z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100265(12/10) IXXH50N60C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 36A, VCE = 10V, Note 1 11 VCE = 25V, VGE = 0V, f = 1MHz VCE = 360V, RG = 5Ω Note 2 Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 360V, RG = 5Ω Note 2 RthJC RthCS Notes: 18 S 2320 138 42 pF pF pF 64 nC 18 nC 25 nC 24 40 0.72 62 42 0.33 ns ns mJ ns ns mJ IC = 36A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 36A, VGE = 15V TO-247 (IXXH) Outline 100 0.55 25 44 1.46 80 90 0.48 ns ns mJ ns ns mJ 0.21 0.25 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH50N60C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 160 55 VGE = 15V 14V 13V 50 45 VGE = 15V 140 12V 35 11V 30 25 10V 20 0 0.5 1 1.5 2 2.5 12V 60 11V 10V 20 8V 6V 0 80 40 9V 5 13V 100 15 10 14V 120 IC - Amperes IC - Amperes 40 9V 7V 0 3 0 5 10 15 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 1.8 55 VGE = 15V 14V 13V 45 1.7 12V 40 11V 35 30 10V 25 20 9V 15 VGE = 15V 1.6 VCE(sat) - Normalized 50 IC - Amperes 25 VCE - Volts VCE - Volts 1.5 I C = 54A 1.4 1.3 1.2 1.1 I 1.0 C = 36A 0.9 10 0.8 8V 5 0 0.5 1 1.5 2 2.5 3 3.5 I 0.7 6V 0 -50 -25 0 4.5 70 IC - Amperes 80 = 54A 3.5 3.0 36A 2.0 75 100 125 150 175 12 13 90 5.0 2.5 50 Fig. 6. Input Admittance TJ = 25ºC 5.5 C 25 100 6.0 I = 18A TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.0 C 0.6 4 VCE - Volts VCE - Volts 20 60 50 40 TJ = 150ºC 25ºC 30 - 40ºC 20 18A 10 1.5 0 1.0 8 9 10 11 12 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 11 IXXH50N60C3 Fig. 7. Transconductance Fig. 8. Gate Charge 32 16 VCE = 300V 14 TJ = - 40ºC, 25ºC, 150ºC 24 12 20 10 VGE - Volts g f s - Siemens 28 16 12 8 6 8 4 4 2 0 I C = 36A I G = 10mA 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 40 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 110 10,000 f = 1 MHz 100 Cies 90 80 1,000 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs IC - Amperes Coes 100 70 60 50 40 30 TJ = 150ºC 20 Cres 10 0 100 10 0 5 10 15 20 25 RG = 5Ω dv / dt < 10V / ns 30 35 40 VCE - Volts 200 300 400 500 600 Fig. 11. Maximum Transient Thermal Impedance VCE - Volts 1 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 0.4 a a sss VCE(sat) Limit 25µs 10 100µs Z(th)JC - ºC / W ID - Amperes 100 0.1 1ms 1 10ms TJ = 175ºC DC TC = 25ºC Single Pulse 0.1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXH50N60C3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1.2 0.7 5.5 Eoff Eon - --- Eoff 5.0 TJ = 150ºC , VGE = 15V 1.0 I C = 54A VCE = 360V 4.5 0.6 2.5 I C = 36A 2.0 0.4 Eoff - MilliJoules 3.0 TJ = 150ºC 2.5 1.5 0.5 2.0 0.4 1.5 TJ = 25ºC 0.3 1.0 0.2 Eon - MilliJoules 3.5 ---- VCE = 360V Eon - MilliJoules 0.8 Eon RG = 5Ω , VGE = 15V 0.6 4.0 Eoff - MilliJoules 3.0 0.5 1.0 0.2 0.1 0.5 5 10 15 20 25 30 35 40 45 0.0 18 50 22 26 30 RG - Ohms 120 3.0 110 2.6 2.2 I C = 54A 0.5 1.8 0.4 1.4 I C = 36A Eon - MilliJoules 0.6 0.3 0.1 75 100 td(off) - - - - 100 250 90 I 150 I 0 10 15 20 25 45 50 90 80 80 60 70 40 60 TJ = 25ºC 0 42 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 46 50 54 td(on) - - - - 85 80 VCE = 360V I C = 36A 90 75 80 70 70 65 60 60 I 50 C = 54A 55 40 50 50 30 45 40 20 25 50 75 100 TJ - Degrees Centigrade 125 40 150 t d(off) - Nanoseconds 100 TJ = 150ºC 38 40 RG = 5Ω , VGE = 15V 100 100 34 35 90 tfi 110 110 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 360V 30 30 120 t f i - Nanoseconds tfi 26 100 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature RG = 5Ω , VGE = 15V 22 C = 54A 50 5 120 18 200 = 36A RG - Ohms 160 20 C 80 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 120 300 VCE = 360V 50 0.2 150 125 tfi TJ = 150ºC, VGE = 15V TJ - Degrees Centigrade 140 54 60 0.6 50 50 350 70 1.0 0.2 25 46 t d(off) - Nanoseconds VCE = 360V 3.4 t f i - Nanoseconds ---- RG = 5Ω , VGE = 15V 0.7 E off - MilliJoules Eon 42 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 0.9 Eoff 38 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 0.8 34 IXXH50N60C3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 90 110 tri 120 TJ = 150ºC, VGE = 15V td(on) - - - - 100 80 100 70 90 60 80 I 50 = 36A C 70 40 60 30 I 50 C = 54A 10 15 20 25 30 35 40 45 60 27 50 26 TJ = 150ºC 40 25 30 24 TJ = 25ºC 23 10 22 0 0 5 28 VCE = 360V 20 10 30 29 RG = 5Ω , VGE = 15V 70 20 40 td(on) - - - - 21 18 50 t d(on) - Nanoseconds VCE = 360V 110 30 tri 80 90 t r i - Nanoseconds 130 t d(on) - Nanoseconds t r i - Nanoseconds 140 22 26 30 34 38 42 46 50 54 IC - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 130 32 tri 110 td(on) - - - 30 RG = 5Ω , VGE = 15V 90 I C = 54A 70 28 26 I C = 36A 50 30 24 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 360V 22 10 25 50 75 100 125 20 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_50N60C3 (5D)5-20-10