Advance Technical Information IXXK100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC90 IF110 ICM TC= 25°C ( Chip Capability ) Terminal Current Limit TC = 90°C TC = 110°C TC = 25°C, 1ms 190 120 100 65 370 A A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A 10 μs VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive PC TC = 25°C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque G C E G = Gate C = Collector z z Weight 695 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 10 g Tab E = Emitter Tab = Collector Features z z TJ TJM Tstg 600V 100A 1.80V 150ns TO-264 Symbol tsc (SCSOA) = = ≤ = z z z Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C © 2010 IXYS CORPORATION, All Rights Reserved z V 5.5 V 50 μA 4 mA TJ = 125°C IGES z z z z z z z 1.50 1.77 ±100 nA 1.80 V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100285(12/10) IXXK100N60B3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 22 VCE = 25V, VGE = 0V, f = 1MHz 40 S 4860 475 83 pF pF pF 143 nC 37 nC 60 nC 30 70 1.9 120 150 2.0 ns ns mJ ns ns mJ IC = 70A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 2.8 32 60 2.3 150 200 2.8 ns ns mJ ns ns mJ 0.15 0.18 °C/W °C/W Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 RthJC RthCS TO-264 (IXXK) Outline Terminals: 1 = Gate 2,4 = Collector 3 = Emitter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. TJ = 150°C 1.6 1.4 TJ = 100°C 8.3 A 140 ns V V 0.30 °C/W RthJC Notes: 2.0 1.8 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK100N60B3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 140 VGE = 15V VGE = 15V 13V 12V 120 11V 100 13V 250 80 10V 60 9V 40 IC - Amperes IC - Amperes 14V 300 12V 200 11V 150 10V 100 8V 9V 20 50 7V 6V 0 0 0.4 0.8 1.2 1.6 2 2.4 8V 7V 0 2.8 0 2 4 6 8 14 16 18 20 150 175 1.8 VGE = 15V 13V 12V 120 VGE = 15V 11V 100 10V 80 60 9V 40 8V 7V 5V 0 0.5 1 1.5 2 2.5 3 C = 140A 1.4 1.2 I C = 70A 1.0 0.8 20 0 I 1.6 VCE(sat) - Normalized 140 IC - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC I C = 35A 0.6 -50 3.5 -25 0 25 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 180 TJ = 25ºC 4.5 160 140 4.0 3.5 I 3.0 C IC - Amperes VCE - Volts 10 VCE - Volts VCE - Volts = 140A 2.5 TJ = 150ºC 25ºC - 40ºC 100 80 60 70A 2.0 120 40 1.5 20 35A 1.0 0 8 9 10 11 12 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXK100N60B3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 25ºC 60 150ºC 50 I C = 70A I G = 10mA 12 VGE - Volts g f s - Siemens VCE = 300V 14 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 Cies 180 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 5 10 15 20 25 30 35 RG = 2Ω dv / dt < 10V / ns 0 100 10 0 TJ = 150ºC 40 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1000 1 VCE(sat) Limit External Lead Limit 25µs 100µs 10 1ms 1 TJ = 150ºC 0.1 0.01 10ms TC = 25ºC Single Pulse DC 0.1 1 Z(th)JC - ºC / W ID - Amperes 100 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXK100N60B3H1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 4.5 5 7 Eon - Eoff 4.0 Eoff --6 TJ = 150ºC , VGE = 15V 4 2.5 3 I 2.0 Eoff - MilliJoules Eoff - MilliJoules I C = 100A = 50A C 3 4 5 6 7 8 9 10 11 12 13 14 TJ = 150ºC 3 2 2 TJ = 25ºC 1 20 15 30 40 50 RG - Ohms 2 2 I C = 50A 1 1 0 75 100 I 260 220 180 I 100 3 4 5 6 7 11 12 13 14 15 160 150 120 TJ = 25ºC 100 80 50 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 90 40 100 td(on) - - - - 220 200 VCE = 360V I C = 100A 220 180 200 160 180 140 I C = 50A 160 120 140 100 120 80 100 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 200 80 tfi RG = 2Ω , VGE = 15V 240 200 70 10 240 260 280 240 TJ = 150ºC 60 9 280 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 360V 50 8 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds tfi RG = 2Ω , VGE = 15V 40 180 = 100A 140 2 320 30 C RG - Ohms 400 20 260 100 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 250 = 50A 220 TJ - Degrees Centigrade 300 C 140 0 150 125 300 VCE = 360V t f i - Nanoseconds 3 td(off) - - - - t d(off) - Nanoseconds I C = 100A 3 350 0 100 TJ = 150ºC, VGE = 15V 300 4 Eon - MilliJoules Eoff - MilliJoules ---- VCE = 360V 50 90 340 tfi RG = 2Ω , VGE = 15V 25 80 340 5 Eon 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 5 Eoff 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 4 3 0 1 2 4 VCE = 360V 1 2 1.5 ---- Eon - MilliJoules 5 Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 4 VCE = 360V 3.0 5 IXXK100N60B3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 76 TJ = 150ºC, VGE = 15V VCE = 360V 140 60 100 52 80 I C 44 = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 180 37 td(on) - - - - 36 RG = 2Ω , VGE = 15V 35 VCE = 360V 120 34 100 I C 33 = 100A 80 32 60 31 I C = 50A 40 t d(on) - Nanoseconds t r i - Nanoseconds 140 30 20 29 0 25 50 75 80 32 TJ = 150ºC, 25ºC 60 30 40 28 20 26 30 40 50 60 70 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 34 20 15 RG - Ohms tri 100 0 20 2 36 RG = 2Ω , VGE = 15V 100 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 80 90 24 100 t d(on) - Nanoseconds C = 100A t d(on) - Nanoseconds I td(on) - - - - VCE = 360V 68 120 38 tri 120 t r i - Nanoseconds 160 t r i - Nanoseconds 140 84 tri IXXK100N60B3H1 Fig. 22. Forward Current IF Versus VF Fig. 25. Dynamic Parameters Qr, IRM Versus TVJ Fig. 23. Reverse Recovery Charge Qr Versus -diF/dt Fig. 24. Peak Reverse Current IRM Versus -diF/dt Fig. 26. Recovery Time trr Versus -diF/dt Z(th)JC - [ ºC / W ] 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width [ms] Seconds Fig. 27. 26 Maximum transient thermal impedance junction to case (for diode) © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_100N60B3(7D)9-30-10-A