Preliminary Technical Information IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC90 IF110 ICM TC= 25°C ( Chip Capability ) Terminal Current Limit TC = 90°C TC = 110°C TC = 25°C, 1ms 170 120 100 65 340 A A A A A IA EAS TC = 25°C TC = 25°C 50 600 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load ICM = 200 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 695 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C © 2011 IXYS CORPORATION, All Rights Reserved PLUS247 (IXXX) G G C E G = Gate C = Collector Tab E = Emitter Tab = Collector 5.5 V 50 μA 4 mA 1.68 1.97 z z z z z z Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages z z High Power Density Low Gate Drive Requirement Applications V TJ = 125°C IGES Tab Features TJ TJM Tstg TL TSOLD G C E ±100 nA 2.20 V V z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100283A(01/11) IXXK100N60C3H1 IXXX100N60C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 70A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 360V, RG = 2Ω Note 2 RthJC RthCS TO-264 Outline 40 S 4810 455 80 pF pF pF 150 34 60 nC nC nC 30 70 2.00 90 75 0.95 ns ns mJ ns ns mJ 1.40 30 65 3.00 105 115 1.40 ns ns mJ ns ns mJ 0.15 0.18 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V trr Characteristic Values Min. Typ. Max. TJ = 150°C 1.6 1.4 2.0 1.8 TJ = 100°C 8.3 A 140 ns V V Terminals: 1 - Gate 2 - Collector 3 - Emitter 0.30 °C/W RthJC Dim. Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 140 VGE = 15V VGE = 15V 13V 12V 120 11V 250 100 10V 80 IC - Amperes IC - Amperes 14V 13V 300 9V 60 40 12V 200 11V 150 10V 100 8V 9V 20 50 7V 6V 0 0 0.5 1 1.5 2 8V 7V 0 2.5 3 3.5 0 2 4 6 8 12 14 16 18 20 150 175 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.0 140 VGE = 15V 13V 12V VGE = 15V 1.8 11V I VCE(sat) - Normalized 120 100 IC - Amperes 10 VCE - Volts VCE - Volts 10V 80 9V 60 40 C = 140A 1.6 1.4 1.2 I C = 70A I C = 35A 1.0 8V 20 0.8 7V 6V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 75 100 125 Fig. 6. Input Admittance 5.0 180 TJ = 25ºC 4.5 160 140 4.0 120 3.5 I C IC - Amperes VCE - Volts 50 TJ - Degrees Centigrade = 140A 3.0 2.5 TJ = 150ºC 25ºC - 40ºC 100 80 60 70A 2.0 40 1.5 20 35A 1.0 0 8 9 10 11 12 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 60 g f s - Siemens VCE = 300V 14 25ºC I G = 10mA 12 150ºC VGE - Volts 50 I C = 70A 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 220 10,000 180 Cies 160 1,000 IC - Amperes Capacitance - PicoFarads 200 Coes 100 140 120 100 80 60 Cres 40 f = 1 MHz 20 0 100 10 0 5 10 15 20 25 30 35 40 TJ = 150ºC RG = 2Ω dv / dt < 10V / ns 150 200 VCE - Volts 250 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1000 1 VCE(sat) Limit ID - Amperes 25µs 100µs 10 Z(th)JC - ºC / W 100 1ms 1 TJ = 150ºC 0.01 10ms TC = 25ºC Single Pulse DC 0.1 1 0.1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.0 Eon - --- TJ = 150ºC , VGE = 15V 2.5 1.5 4 1.0 I C = 50A 0.5 3 4 5 6 7 8 9 10 11 12 13 14 ---4 VCE = 360V TJ = 150ºC 1.5 3 1 2 TJ = 25ºC 3 0.5 2 0 1 20 15 30 40 50 RG - Ohms 90 0 100 280 tfi ---- RG = 2Ω , VGE = 15V 1.0 t f i - Nanoseconds I C = 50A 240 220 200 140 I C = 50A 180 160 120 140 2 I 100 C = 100A t d(off) - Nanoseconds 3 260 VCE = 360V 4 1.5 td(off) - - - - TJ = 150ºC, VGE = 15V 160 I C = 100A VCE = 360V Eon - MilliJoules Eoff - MilliJoules 80 180 5 2.0 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 2.5 Eon 60 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff Eon - MilliJoules 5 Eon - MilliJoules I C = 100A 2.0 Eon RG = 2Ω , VGE = 15V 2 6 VCE = 360V 2 5 Eoff Eoff - MilliJoules Eoff Eoff - MilliJoules 2.5 7 120 100 0.5 25 50 75 100 125 1 150 80 80 2 3 4 5 6 7 10 11 12 13 14 15 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 200 160 180 tfi td(off) - - - - RG = 2Ω , VGE = 15V tfi 125 120 100 100 TJ = 25ºC 75 80 50 60 100 t f i - Nanoseconds TJ = 150ºC 140 VCE = 360V 130 120 120 I C = 100A 110 100 100 90 I C = 50A 80 80 70 20 30 40 50 60 70 80 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 90 60 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 140 td(on) - - - - RG = 2Ω , VGE = 15V 140 t d(off) - Nanoseconds 150 160 150 160 VCE = 360V t f i - Nanoseconds 9 RG - Ohms TJ - Degrees Centigrade 175 8 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 76 TJ = 150ºC, VGE = 15V VCE = 360V 68 I C 60 = 100A 100 52 80 44 I C = 50A 60 36 40 28 20 3 4 5 6 7 8 9 10 11 12 13 14 180 36 tri VCE = 360V 35 34 120 33 I C = 100A 32 80 31 60 30 I C = 50A 40 29 20 28 0 25 50 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 2Ω , VGE = 15V 100 80 32 TJ = 150ºC 60 27 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 30 40 28 20 26 30 40 50 60 70 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 34 TJ = 25ºC 20 15 RG - Ohms 160 100 0 20 2 36 RG = 2Ω , VGE = 15V 80 90 24 100 t d(on) - Nanoseconds 120 td(on) - - - - VCE = 360V t d(on) - Nanoseconds 140 38 tri 120 t r i - Nanoseconds 160 t r i - Nanoseconds 140 84 tri IXXK100N60C3H1 IXXX100N60C3H1 Fig. 22. Forward Current IF Versus VF Fig. 25. Dynamic Parameters Qr, IRM Versus TVJ Fig. 23. Reverse Recovery Charge Qr Versus -diF/dt Fig. 24. Peak Reverse Current IRM Versus -diF/dt Fig. 26. Recovery Time trr Versus -diF/dt Z(th)JC - [ ºC / W ] 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width Seconds [ms] 27. Maximum transient thermal impedance junction to case (for diode) Fig. 26 © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_100N60C3(7D)9-30-10-A