Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 160 82 320 A A A IA EAS TC = 25°C TC = 25°C 41 800 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load ICM = 164 @VCE ≤ VCES A PC TC = 25°C 1040 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TJM Tstg G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight E G = Gate E = Emitter Tab C = Collector Tab = Collector Features z z z z z TL TSOLD C z Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 82A, VGE = 15V, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved z z V TJ = 125°C IGES z 2.75 3.50 4.5 V 25 250 μA μA ±100 nA 3.20 V V z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100335(05/11) IXYH82N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 75A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2Ω Note 2 Inductive load, TJ = 125°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2Ω Note 2 RthJC RthCS Notes: TO-247 (IXYH) Outline 50 S 4060 285 110 pF pF pF 215 26 84 nC nC nC 29 78 4.95 192 93 2.78 ns ns mJ ns ns mJ 280 5.00 29 90 7.45 200 95 3.70 ns ns mJ ns ns mJ 0.21 0.12 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH82N120C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 VGE = 15V 13V 11V 10V 9V 160 140 250 80 11V 10V 9V 200 8V 100 IC - Amperes IC - Amperes 120 VGE = 15V 13V 12V 7V 60 150 8V 100 7V 6V 40 50 20 6V 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 2.2 160 VGE = 15V 13V 11V 10V 9V IC - Amperes 120 I 1.8 VCE(sat) - Normalized 140 VGE = 15V 2.0 8V 100 80 7V 60 40 20 1.4 I 1.2 C = 82A I C 1.0 = 41A 0.6 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.4 6 -50 6.5 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 8.5 TJ = 25ºC 7.5 140 120 5.5 I C IC - Amperes 6.5 VCE - Volts = 164A 1.6 0.8 6V C = 164A 4.5 82A 3.5 100 80 60 TJ = 125ºC 25ºC - 40ºC 40 2.5 20 41A 1.5 0 5 6 7 8 9 10 11 12 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 13 14 15 3 3.5 4 4.5 5 5.5 VGE - Volts 6 6.5 7 7.5 8 IXYH82N120C3 Fig. 8. Gate Charge Fig. 7. Transconductance 80 16 TJ = - 40ºC 70 60 50 I C = 82A I G = 10mA 12 25ºC VGE - Volts g f s - Siemens VCE = 600V 14 125ºC 40 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 220 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 140 120 1,000 IC - Amperes Capacitance - PicoFarads 160 Cies Coes 100 80 60 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 40 TJ = 125ºC 20 RG = 2Ω dv / dt < 10V / ns 0 200 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH82N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eoff Eon - --- VCE = 600V 6 8 3 6 2 4 I 1 0 4 6 8 10 12 14 16 8 VCE = 600V 3.5 7 TJ = 125ºC 3 6 2.5 5 2 4 1.5 3 2 1 2 0 0.5 40 18 50 60 70 RG - Ohms ---- RG = 2Ω , VGE = 15V VCE = 600V 3.5 200 8 180 7 160 6 I C = 80A 2.5 5 2 4 I C = 40A 1.5 780 tfi td(off) - - - - VCE = 600V 620 140 540 I C = 40A 120 460 100 380 80 3 1 0.5 50 75 100 300 2 60 1 125 40 tfi VCE = 600V 240 240 230 200 4 6 8 14 16 18 120 200 80 190 TJ = 25ºC 40 180 0 80 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 90 td(on) - - - - RG = 2Ω , VGE = 15V 260 170 100 160 240 I C = 40A 120 220 I C = 80A 80 200 40 180 0 25 50 75 TJ - Degrees Centigrade 100 160 125 t d(off) - Nanoseconds 210 TJ = 125ºC 70 12 VCE = 600V 220 160 60 10 280 tfi t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - RG = 2Ω , VGE = 15V 50 220 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds 280 40 = 80A RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 200 C 140 2 TJ - Degrees Centigrade 240 700 TJ = 125ºC, VGE = 15V I 25 1 100 t d(off) - Nanoseconds 3 9 Eon - MilliJoules Eoff - MilliJoules Eon 90 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance t f i - Nanoseconds 4.5 Eoff 80 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4 9 TJ = 25ºC = 40A C ---- Eon - MilliJoules 10 4 2 4 Eon - MilliJoules I C = 80A Eon RG = 2Ω , VGE = 15V 12 5 10 Eoff 4.5 14 TJ = 125ºC , VGE = 15V Eoff - MilliJoules 7 Eoff - MilliJoules 5 16 IXYH82N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri td(on) - - - - 55 TJ = 125ºC, VGE = 15V VCE = 600V 120 60 tri = 80A 40 60 35 40 30 I C = 40A 20 100 40 TJ = 125ºC 80 30 TJ = 25ºC 60 20 40 10 t d(on) - Nanoseconds C 80 t d(on) - Nanoseconds I 45 50 VCE = 600V 50 100 td(on) - - - - RG = 2Ω , VGE = 15V 120 t r i - Nanoseconds 140 t r i - Nanoseconds 140 60 25 0 20 20 2 4 6 8 10 12 14 16 40 18 50 60 70 80 90 0 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 36 tri td(on) - - - - 34 RG = 2Ω , VGE = 15V VCE = 600V 100 32 80 I C = 80A 60 30 28 40 26 I C = 40A 20 0 25 50 75 100 t d(on) - Nanoseconds t r i - Nanoseconds 120 24 22 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_82N120C3(8M)05-10-11