MCC 224 MCD 224 ITRMS = 2x 400 A ITAVM = 2x 240 A VRRM = 2000-2200 V Thyristor Modules Thyristor/Diode Modules 3 VRRM VDSM VDRM V V 2100 2300 2000 2200 Type MCC 224-20io1 MCC 224-22io1 Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0 MCD 224-20io1 MCD 224-22io1 Maximum Ratings 400 240 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 8000 8500 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 7000 7500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 320000 303000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 245000 240000 A2s A2s TVJ = TVJM repetitive, IT = 750 A f = 50 Hz, tP = 200 ms VD = 2/3 VDRM IG = 1 A non repetitive, IT = ITAVM diG/dt = 1 A/ms 100 ● ● V/ms PGAV VRGM 120 60 20 10 W W W V TVJ TVJM Tstg -40 ...130 130 -40 ...125 °C °C °C 3000 3600 V~ V~ TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) PGM TVJ = TVJM IT = ITAVM tP = 30 ms tP = 500 ms VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Typical including screws Weight t = 1 min t=1s ● ● 1000 (dv/dt)cr 4.5-7/40-62 11-13/97-115 750 Nm/lb.in. Nm/lb.in. g © 2000 IXYS All rights reserved 3 1 5 4 2 International standard package Direct Copper Bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins Applications ● ● ● ● ● Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches Advantages ● ● Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 5 4 2 Features A/ms A/ms 6 7 1 MCD ● 500 3 MCC ● (di/dt)cr 4 1 Symbol òi2dt 5 ● Simple mounting Improved temperature and power cycling Reduced protection circuits 024 VRSM 76 2 1-4 MCC 224 MCD 224 Symbol Test Conditions Characteristic Values IRRM, IDRM TVJ = TVJM; VR = VRRM 40 mA VT IT 1.4 V VT0 rT For power-loss calculations only (TVJ = TVJM) 0.8 0.76 V mW VGT VD = 6 V; IGT VD = 6 V; 2 3 150 220 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; VD = 6 V; tP = 30 ms diG/dt = 0.45 A/ms; IG = 0.45 A 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM diG/dt = 1 A/ms; IG = 1 A 2 ms tq TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 ms dv/dt = 50 V/ms; IT = 300 A; -di/dt = 10 A/ms typ. 200 ms QS IRM TVJ = TVJM -di/dt = 50 A/ms; IT = 400 A 760 275 mC A 10 1: IGT, TVJ = 130 140°C RthJC RthJK dS dA a = 600 A; TVJ = 25°C TVJ TVJ TVJ TVJ = 25°C = -40°C = 25°C = -40°C V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 3 6 2 5 1 1 4 4: PGM = 20 W 5: PGM = 60 W IGD, TVJ = 130 140°C 0.1 10-3 10-2 6: PGM = 120 W 10-1 100 101 A IG 102 Fig. 1 Gate trigger characteristics per thyristor; DC current per module per thyristor; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration 0.139 0.069 0.179 0.089 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 100 TVJ = 25°C µs tgd typ. Limit 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 0.01 MCC © 2000 IXYS All rights reserved A 1 10 Fig. 2 Gate trigger delay time MCD M8x20 0.1 IG Dimensions in mm (1 mm = 0.0394") M8x20 2-4 MCC 224 MCD 224 106 8000 ITSM It A 350 50 Hz 80 % VRRM TVJ = 45°C TVJ = 130°C 6000 400 A VR = 0V 2 ITAVM A2s DC 180° sin 120° 60° 30° 300 250 TVJ = 45°C TVJ = 130°C 105 4000 200 150 100 2000 50 0 0.001 104 0.01 s 0.1 1 0 1 ms t t 0.1 0.2 0.3 0.4 0.6 0.8 1 400 300 50 75 100 125 °C 150 Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) RthKA K/W W 25 Fig. 4a Maximum forward current at case temperature 500 Ptot 0 TC Fig. 4 I2t versus time (1-10 ms) Fig. 3 Surge overload current ITSM: Crest value, t: duration 10 DC 180° sin 120° 60° 30° 200 100 0 0 100 200 A 0 300 25 50 75 100 ITAVM 2000 Ptot W 125 °C TA 150 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature RthKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 1000 Circuit B6 3xMCC224 500 0 0 200 400 600 A IdAVM 0 25 50 75 100 °C 125 150 TA 745 © 2000 IXYS All rights reserved 3-4 MCC 224 MCD 224 2000 Ptot Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature RthKA K/W W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 1000 Circuit W3 3xMCC224 500 0 0 100 200 300 400 500 A 0 25 50 75 100 125 °C 150 TA IRMS 0.25 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: K/W 0.20 ZthJC d 0.15 DC 180° 120° 60° 30° 30° 60° 120° 180° DC 0.10 0.05 0.139 0.148 0.156 0.176 0.214 Constants for ZthJC calculation: i 0.00 10-3 RthJC (K/W) 10-2 10-1 100 101 s 102 t 0.30 1 2 3 4 Rthi (K/W) ti (s) 0.0067 0.0358 0.0832 0.0129 0.00054 0.098 0.54 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W 0.25 RthJK for various conduction angles d: ZthJK 0.20 d DC 180° 120° 60° 30° 0.15 30° 60° 120° 180° DC 0.10 0.05 -2 10 -1 10 0 10 0.179 0.188 0.196 0.216 0.256 Constants for ZthJK calculation: i 0.00 10-3 RthJK (K/W) s 1 10 t 2 10 1 2 3 4 5 Rthi (K/W) ti (s) 0.0067 0.0358 0.0832 0.0129 0.04 0.00054 0.098 0.54 12 12 745 © 2000 IXYS All rights reserved 4-4